2DB1689-7 Discrete Semiconductor Products |
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Allicdata Part #: | 2DB1689DITR-ND |
Manufacturer Part#: |
2DB1689-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 12V 1.5A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 1.5A 300MHz 300mW... |
DataSheet: | 2DB1689-7 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 200mA, 2V |
Power - Max: | 300mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | 2DB1689 |
Description
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2DB1689-7 is a single-stage PNP bipolar junction transistor (BJT) device that is generally used in industrial-grade, long-life applications. It is typically used in radio-frequency (RF) applications, such as in medium-power radio amplifiers, oscillators, and transmitters. The device was designed to operate with minimal power consumption and excellent thermal performance. It is capable of reaching high gains and is relatively inexpensive.
Overview Of 2DB1689-7
2DB1669-7 is a NPN- type Bipolar Junction Transistor (BJT) that is designed specifically for RF applications. It is built using a P-type epitaxial base and a N-type emitter layer. The transistor has a full range of collector, emitter and base terminals, allowing for a wide range of configurations. The device is made from highly reliable, High-Reliability (HiR) grade silicon and is available in an industry-standard, TO-18 package with a DIP footprint.Features and Benefits of 2DB1689-7
2DB1689-7 is a high-performance transistor, offering an impressive array of features and benefits. It offers an excellent thermal performance, with a very low thermal resistance and an excellent power cycling capability. It also delivers a high gain and a wide range of collector to emitter voltages. The device is capable of withstanding up to 200 volts continuous collector to emitter voltage and has a collector current rating of 0.5 amperes. Additionally, the device offers superior electrical reliability, with a very low leakage current.2DB1689-7 Application Fields and Working Principle
2DB1689-7 is capable of a variety of applications, in both industrial and consumer electronics. The transistor is typically used in medium-power radio-frequency amplifier, oscillator and transmitter designs. It can also be used in low-power switch-mode power supplies and motor control circuits. The device is also widely used in audio preamps and for digital circuitry. The working principle of 2DB1689-7 is quite simple. When current is applied to the base terminal, it generates a current flow from collector to emitter and from base to emitter. This current flow is controlled by the base current, which acts as a circuit switch. When the base current is increased, the collector-emitter current flow increases. When the base current is decreased, the collector-emitter current flow decreases. This phenomenon is known as active-mode operation. In active-mode operation, the transistor acts like a switch, with the base current controlling the state of the switch. The transistor can also be operated in the saturation mode, in which it acts like an amplifier. In this mode, an increase in the base current causes a decrease in the collector-emitter current flow. This behavior is useful in RF amplifier designs, where a decrease in the collector-emitter current causes a decrease in the amplifier gain.Conclusion
2DB1689-7 is an excellent device for a variety of RF applications. It offers superior thermal performance, high gain and a wide range of collector to emitter voltages. It is a reliable, long-life device that is suitable for long-term industrial-grade applications. The 2DB1689-7 Bipolar Junction Transistor is a cost-effective, reliable solution for a variety of RF applications.The specific data is subject to PDF, and the above content is for reference
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