Allicdata Part #: | 1034-2DB1188PDITR-ND |
Manufacturer Part#: |
2DB1188P-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 32V 2A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor PNP 32V 2A 120MHz 1W Surf... |
DataSheet: | 2DB1188P-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 500mA, 3V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
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,The 2DB1188P-13 is a high-performance, feature-rich Single Bipolar Junction Transistor (BJT) which combines the latest advancements in BJT technology. It is designed for high-speed, low-power digital and analog applications, and serves as a perfectly suitable replacement for other BJT types such as PNP and CNP types. The 2DB1188P-13 offers an improved power output and improved performance in a smaller, more cost-effective package than prior generations of BJTs.
Application Field
The 2DB1188P-13 is designed for use in a wide variety of high-speed, low-power digital and analog applications. It can be found in power switching, current sensing and voltage regulation circuits, as well as in amplifier and oscillator circuits. Due to its low On-state resistance, the 2DB1188P-13 is well suited for applications that require high efficiency and long lifetime. It is also suitable for RF amplifiers and oscillators, as the 2DB1188P-13 has a high transition frequency and low transition times, making it ideal for high-frequency operation.
Working Principle
A Bipolar Junction Transistor is essentially two PNP or two NPN transistor junction layers connected together in a compound structure, with a common terminal called the Base. An electric current passing through the Base can be used to control the electrical current that passes through the transistor. The 2DB1188P-13 is a single BJT, meaning it has only one common Base terminal, rather than the two terminals required by a PNP or NPN. This allows the 2DB1188P-13 to be used in applications requiring only one transistor, as compared to applications that require two or more transistors.
When used in power switching circuits, the Base current passing through the 2DB1188P-13 can be used to control the switch state. By controlling this current, the voltage across the switch can be manipulated, thus controlling the output voltage of the circuit. In addition, the 2DB1188P-13 can be used in current sensing circuits, as the current passing through the Base can be used to determine the external current flowing through the circuit. Finally, the 2DB1188P-13 can be used in voltage regulation circuits, as the voltage passing through the Base can be used to control the output voltage of the circuit.
The 2DB1188P-13 is a versatile, feature-rich BJT that can be used in a wide variety of applications. Its small size, high performance, and low power requirements make it an ideal choice for high-speed, low-power digital and analog applications. With its high On-state resistance, it can achieve high efficiency and long service life. Additionally, its high transition frequency and low transition times make it ideal for high-frequency operation. Therefore, the 2DB1188P-13 is a perfect option for use in power switching, current sensing, voltage regulation, amplifier, and oscillator circuits.
The specific data is subject to PDF, and the above content is for reference
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