2DB1386Q-13 Discrete Semiconductor Products

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2DB1386Q-13 is a type of single bipolar junction transistor (BJT). It is mainly used for analog and digital circuit applications such as audio amplifiers, switching circuits, and timer circuits.

A bipolar transistor consists of three terminals: base, collector, and emitter. The current flow from the emitter to the collector is controlled by the amount of current flowing into the base. The current flow between the emitter and collector is known as the collector current, while the current flow into the base is known as the base current. The ratio of collector current to base current is known as the transistor\'s current gain, and it is typically denoted by hFE.

The 2DB1386Q-13 is a BJT which has a maximum collector current of 40mA, a maximum collector-emitter voltage of 36V, and a maximum gain of 400. It has a static base-emitter saturation voltage of 0.2V, and a total power dissipation 1.2 Watts. The 2DB1386Q-13 also has a DC current gain of 50-400. These specifications make it a suitable choice for audio applications such as amplifiers, as well as switching and timer circuits.

The working principle of a BJT is based on the fact that when a voltage is applied to the base terminal, a current flows through the base-emitter junction. This current is known as the emitter current, and it is proportional to the voltage applied to the base. The collector current is dependent on the emitter current, and it is typically much larger. The ratio of collector current to emitter current is known as the transistor\'s current gain, or hFE.

The 2DB1386Q-13 can be used in a variety of circuit applications due to its high current gain and maximum power dissipation. It is particularly well-suited for audio amplifiers due to its low static base-emitter saturation voltage. It can also be used in switching and timer circuits since it has a high gain and maximum current and voltage ratings. Furthermore, its low-power dissipation makes it suitable for battery-powered devices.

In conclusion, the 2DB1386Q-13 is a single bipolar junction transistor (BJT) used for analog and digital circuit applications such as audio amplifiers, switching circuits, and timer circuits. It has a maximum collector current of 40mA, a maximum collector-emitter voltage of 36V, and a maximum gain of 400. It has a static base-emitter saturation voltage of 0.2V, and a total power dissipation 1.2 Watts. The 2DB1386Q-13 is suitable for a wide range of applications due to its high current gain, maximum power dissipation, and low static base-emitter saturation voltage.

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