2N3417_D26Z Allicdata Electronics
Allicdata Part #:

2N3417_D26Z-ND

Manufacturer Part#:

2N3417_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 500mA 625mW Thro...
DataSheet: 2N3417_D26Z datasheet2N3417_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N3417
Description

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2N3417_D26Z is a bipolar junction transistor (BJT) constructed as a single NPN device. The device is a medium power amplifier that is suitable for use in wide variety of general purpose applications such as amplification of audio signals, switching circuits and linear amplification of low voltage logic signals. The transistor is also suitable for use in other applications such as as driving relays, motors or solenoids, as well as in signal conditioning circuits or pulse generators. The 2N3417_D26Z is a silicon-based NPN transistor with a power rating of 350 mW. The transistor has a current gain of up to 500, depending on the application. The device is available in through-hole and surface mount packages. The device has a maximum collector-base voltage of 30 volts, and a maximum collector-emitter voltage of 25 volts. In addition, the device has a maximum collector current of 1.25 amps and a maximum emitter current of 200 mA.The 2N3417_D26Z is designed for use in both small-signal and large-signal applications. In small-signal applications, the device is used to amplify and switch the signals, while in large-signal applications, the device is used to drive relays and motors. The device is also suitable for use in audio amplifier circuits and linear integrator circuits. The working principle of the 2N3417_D26Z involves controlling the flow of current through the transistor by adjusting the base-emitter voltage. When the base voltage is increased, the current flow increases, thereby turning the device “on”. Conversely, when the base voltage is decreased, the current flow decreases, turning the device “off”. By varying the base voltage, the collector current can be controlled. This can be used to control the relay or motor in a large-signal applications.The power of the 2N3417_D26Z can be increased by connecting the collector to a heat sink. The heat sink helps to dissipate excess heat, thereby increasing the power rating of the device. The transistor can also be used as a transistor switch, by driving the base current with a pulsed input. As the input voltage increases, the transistor will turn “on” and by decreasing the input voltage, the transistor will turn “off”.In conclusion, the 2N3417_D26Z is a NPN transistor designed for use in a variety of general purpose applications. The device has a current gain of up to 500, depending on the application. The device is available in through-hole and surface mount packages, and is capable of providing a maximum collector current of 1.25 amps and a maximum emitter current of 200 mA. The device is suitable for use in audio amplifier circuits, linear integrator circuits, and for driving relays and motors. The working principle of the transistor involves controlling the current flow through the device by adjusting the base-emitter voltage. The power of the device can be increased by connecting the device to a heat sink.

The specific data is subject to PDF, and the above content is for reference

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