Allicdata Part #: | 2N3440U4MS-ND |
Manufacturer Part#: |
2N3440U4 |
Price: | $ 130.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER BJT |
More Detail: | Bipolar (BJT) Transistor NPN 250V 1A 5W Surface M... |
DataSheet: | 2N3440U4 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 118.59400 |
Specifications
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4mA, 50mA |
Current - Collector Cutoff (Max): | 2µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
Power - Max: | 5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | U4 |
Description
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.2N3440U4 Application Field and Working PrincipleThe 2N3440U4 is a commonly used BJT (bipolar junction transistor) transistor designed for use in amplification and switching in many industries. It is a single transistor with very good gain, highest breakdown voltage, and a wide range of operating temperature. Its applications include telephone switching, radio transmitters and receivers, high-frequency switches, digital logic circuits, audio amplifiers, and power amplifiers. It has been manufactured for over four decades, offering reliable performance and service in the consumer electronics industry.The 2N3440U4 is constructed by combining three electrically conductive layers (base, emitter, and collector) that are fabricated from silicon material. Together, these layers form the output transistor, called a BJT. The base layer consists of either two diffused regions or layers of silicon that control the current flow between the emitter and the collector. The emitter side of the BJT is connected to an external voltage source and the collector layer is connected to an external voltage source as well. When a voltage is applied to the base, it forms an electric field between the emitter and collector allowing electrons to flow from the emitter to the collector, creating a current. This current flow is controlled by the value of the applied voltage to the base. When the voltage is increased, the electric field increases, allowing more electrons to flow from the emitter to the collector. This is called “forward-biased” or “normal-biased” and is used for amplifying signals. On the other hand, when the voltage is decreased, the electric field decreases, and fewer electrons are able to flow from the emitter to the collector. This is called “reverse-biased” and is used for switching applications.The 2N3440U4 is designed to offer a wide range of operating temperatures, making it possible to be used in a variety of applications in different climates. It can carry currents up to 250 mA and it has a voltage rating of 40V. It is also designed with a very low noise margin, so it is suitable for low-noise audio and radio applications. Additionally, the 2N3440U4 has a low power dissipation and a very high gain rating.The 2N3440U4 is a widely used transistor due to its wide range of applications, reliable performance and low power consumption. Its wide range of operating temperatures and high gain rating make it desirable for use in many consumer electronics devices, telephone systems, radio transmitters and receivers, and digital logic circuits. Its ability to amplify signals and switch operations make it a popular choice for many industrial applications as well.The specific data is subject to PDF, and the above content is for reference
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