Allicdata Part #: | 2N3417_D75Z-ND |
Manufacturer Part#: |
2N3417_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 500mA 625mW Thro... |
DataSheet: | 2N3417_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 3mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 4.5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3417 |
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The 2N3417_D75Z is a single, bipolar junction transistor (BJT) device. It is part of the NPN type large-signal switching transistors with a built-in base-emitter protection diode.
This type of transistor device is designed for general purpose digital switching and linear amplification applications, as well as for power supply, motor control, and sensing/detection circuits. The main advantage of this device is that it is capable of handling large input currents, making it well-suited for power applications.
The actual structure of the 2N3417_D75Z is composed of a pair of P-type semiconductor material layers sandwiched between a single N-type semiconductor material layer. When a voltage is applied to the base-emitter region, the electrons in the N-type layer travel across the base-emitter junction and combine with the holes in the P-type layer. When these two regions are connected, a current flow is created in the transistor.
The working principle of the 2N3417_D75Z is based on the basic principle of a BJT, which can be described as a current controlled device. This means that the collector current, or output, is determined by the amount of base current, or input. For example, if the device is in an active mode, the base current is set to a certain level, and the collector current will become a function of this base current.
In terms of its application field, the 2N3417_D75Z is largely used for power supply applications that require large input current handling. It is also well-suited for a variety of linear amplification and switching circuits, including those used in audio amplifiers and logic circuits. In terms of position mode controls, the 2N3417_D75Z can be used to vary the collector-emitter voltage in power supply circuits.
Overall, the 2N3417_D75Z is a single, bipolar junction transistor device that is well-suited for power supply, motor control, and sensing/detection circuitry. Its main capabilities come from its ability to handle large input currents, and it is commonly used in applications that require linear amplification or switching. In addition, its position mode controls can be used to vary the collector-emitter voltage in power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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