2N3468L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N3468L is a type of high-power NPN silicon transistor specifically designed for application and special use in the field of high-frequency, very-low-noise amplifier applications. This type of transistor is most commonly used in the electronics industry to provide power control and amplification in highly sensitive sensitive applications and instrumentation. This type of transistor is capable of high-power operation with very low distortion due to its wide bandgap and high-frequency capability.

Generally speaking, the 2N3468L operates in a single stage of operation through a base, collector, and emitter junction, commonly known as bipolar junction transistors (BJT). This type of transistor is considered one of the most important types of transistors as they can supply very large amounts of current with minimal voltage, allowing it to be used in a variety of different applications, ranging from power BCG amplifiers to amplifiers used in audio circuitry.

The working principle behind the 2N3468L stems from how it uses two different types of junctions between the collector and the base (N-type) and the collector and emitter (P-type). The NPN type of transistor is referred to as NPN because it has an N-type junction between the collector and the base and a P-type junction between the collector and the emitter. The PNP type of transistor is referred to as PNP because it has a P-type junction between the collector and the base and an N-type junction between the collector and the emitter.

In the case of the 2N3468L, a large voltage is applied to the base in order to be able to switch it on or off. When the transistor is switched on, the electrons from the base are able to flow through to the emitter and the collector, thus allowing current to flow between them. This current flow will then follow the collector current flow and be amplified.

The main benefit of the 2N3468L transistor is that it is capable of providing up to 80 Watts of power in the form of current at very low distortion due to its high bandgap and high-frequency capability. This type of transistor is also capable of providing very high input impedance and high-speed switching with very low distortion. This type of transistor is also extremely robust and capable of operating at high temperatures, making it an ideal choice for applications where high power and high-speed switching are needed.

In conclusion, the 2N3468L transistor is a highly versatile type of BJT that is suitable for use in a wide variety of power control, amplification, and high-frequency applications, where very low distortion and fast switching is required. It is also highly reliable and capable of operating under extreme temperature conditions and is capable of supplying up to 80 watts of power at a very low distortion.

The specific data is subject to PDF, and the above content is for reference