2N3420

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The 2N3420 is a high-performance NPN transistor used for low-power amplifier applications in the audio-frequency range. This device features an epitaxial flat-base structure with low noise and distortion. It is also suitable for use as a mixer or modulator. The 2N3420 is available in a plastic package and is available in both through-hole and surface mount configurations.

The 2N3420 is a single-stage bipolar junction transistor (BJT) which forms a good amplifier. The device consists of three terminals – the base, the collector and the emitter. The input signal is applied to the base, while the collector and emitter are connected to the output. This device operates on the principle of minority carrier injection. A voltage applied to the base causes a small current to flow into the base and this current is amplified as it passes through the electric field generated by the collector-base junction. This amplified current is then transferred to the emitter.

The 2N3420 has a wide range of applications in low-power audio amplifier and low-noise amplifiers. It is also used in amateur radios and transmitters, as well as in telephone systems. This transistor can also be used as a mixer or modulator in radio-frequency applications. Its high noise figure and low power consumption makes it an ideal choice for audio applications. It is also used for DC power control applications in linear and switching power supplies.

This device is manufactured by many companies and is readily available in both through-hole and surface mount packages. It is designed to be used with a de-coupling capacitor connected between the base and collector terminals to reduce the adverse effects of high frequency noise and ringing. The device also features a low-temperature coefficient of voltage gain and has a wide range of current gain.

In conclusion, the 2N3420 is a high-performance NPN transistor suitable for use in low-power audio amplifier and low-noise amplifier applications. This device is readily available and can be used in a variety of applications. Its low-temperature coefficient of voltage gain and wide range of current gain make it an ideal choice for many applications.

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