Allicdata Part #: | 2N3416_D27Z-ND |
Manufacturer Part#: |
2N3416_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 500mA 625mW Thro... |
DataSheet: | 2N3416_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 3mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 2mA, 4.5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3416 |
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The 2N3416_D27Z is an NPN Bipolar Junction Transistor (BJT). It is used in amplifying and switching applications, and has a wide variety of applications due to its wide current gain range and low saturation voltage. The 2N3416_D27Z is ideal for high frequency applications due to its fast switching time.
2N3416_D27Z Application Field
The application field of the 2N3416_D27Z is quite broad due to its superior performance characteristics. This NPN BJT can be used in amplifying and switching applications for audio, RF, and video signal amplification. It is also well suited for switching control applications such as lamps, motors, and relays. The 2N3416_D27Z is often used in linear amplifying circuits and digital logic circuits.
2N3416_D27Z Working Principle
The working principle of an NPN BJT is based on the formation of a semiconductor interface. This is done by sharing three semiconductor material layers, the base, the collector, and the emitter. When an electric current passes through the base-emitter junction, or emitter-base junction, it triggers a flow of electric current through the collector-emitter junction. This flow of current creates the amplification effect and switching of a transistor. The 2N3416_D27Z transistor amplifies and switches current by applying a small current to its base.
The current amplification offered by the 2N3416_D27Z is determined by the ratio of the collector current to the base current, also known as the current gain. The 2N3416_D27Z has a current gain, hFE, between 140 and 560. The higher the current gain, the greater the output current from the transistor. The Collector-Emitter Saturation Voltage of the 2N3416_D27Z is approximately 0.25V, which makes it well suited for use in linear amplifying circuits.
The switching capabilities of the 2N3416_D27Z are also quite impressive. It can switch current within 300 microseconds and can handle a peak collector current of 0.5 amps. Furthermore, the 2N3416_D27Z can handle a maximum voltage of 30V on its Collector-Emitter and Base-Emitter junctions. This makes it well suited for use in higher voltage applications
Conclusion
The 2N3416_D27Z is an NPN BJT that is well suited for use in amplifying and switching applications. It has a wide current gain range and a low saturation voltage, which make it ideal for high frequency applications. The 2N3416_D27Z can handle a maximum voltage of 30V and can switch current within 300 microseconds. Therefore, it is well suited for use in higher voltage applications and fast-switching applications.
The specific data is subject to PDF, and the above content is for reference
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