2N3416_D26Z Allicdata Electronics
Allicdata Part #:

2N3416_D26Z-ND

Manufacturer Part#:

2N3416_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 500mA 625mW Thro...
DataSheet: 2N3416_D26Z datasheet2N3416_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N3416
Description

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2N3416_D26Z is a Bipolar (BJT) type NPN transistor with negative characteristics. It is most commonly used in switching, amplifier, and oscillator applications. It is also used in other electronic circuits such as in drivers for LEDs and for digital logic design.

The 2N3416_D26Z is a silicon NPN transistor which is available in different packages and frequencies. It is an epitaxial type BJT and has a maximum collector current of 0.6A, a maximum collector-emitter voltage of 30V and a collector-base breakdown voltage of 75V. The maximum power rating for the transistor is 1W.

The internal structure of a 2N3416_D26z transistor consists of a P-type semiconductor forming the base, an N-type semiconductor forming the collector, and an N-type semiconductor forming the emitter. The base-emitter junction is forward-biased while the collector-base junction is reverse-biased. This causes electrons to be injected from the emitter into the base region and then collected by the collector.

The 2N3416_D26Z can be used as a voltage amplifier, an oscillator, or a switch. In an amplifier application, the base terminal receives a signal voltage that is amplified by the device and produces an output voltage at the collector terminal. The gain of the device is determined by the ratio of the collector current to the base current. This type of transistor also has a high current gain, making it suitable for applications that require wide-band amplifiers.

In an oscillator application, the transistor is biased in a way that causes it to produce an output voltage in the form of a sine wave. This type of transistor can be used to generate a frequency range from 100kHz to 200MHz. The frequency range is determined by the external components connected to the transistor.

Finally, the 2N3416_D26Z can be used as a switch. In this application, the transistor is biased in such a way that it operates as an open switch when no input voltage is applied and it conducts current when a signal voltage is supplied to the base terminal. This type of transistor is widely used in timer circuits and various other digital circuit designs.

In conclusion, the 2N3416_D26z is a general-purpose NPN bipolar transistor with negative characteristics. It can be used in switching, amplifier, and oscillator applications and it has a wide frequency range. The device has a high current gain, making it suitable for high frequency applications. The 2N3416_D26z is an ideal choice for digital logic designs, drivers for LEDs, and for switching applications.

The specific data is subject to PDF, and the above content is for reference

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