2N3439UA

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	350V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 4mA, 50mA
Current - Collector Cutoff (Max):	2µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 20mA, 10V
Power - Max:	800mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, No Lead
Supplier Device Package:	--

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Introduction

A bipolar junction transistor (BJT) is a three terminal semiconductor device, in which the current flow is controlled by the relative amplitudes of the base and collector voltages. The 2N3439UA is a PNP silicon planar epitaxial transistor commonly used in audio applications.

Applications

The 2N3439UA is designed for use in general purpose, low frequency amplifier applications. It is suitable for use in audio, amplifier and switching applications. Typical applications include amplifier circuits, high voltage switching, and motor control.

Features

The 2N3439UA features excellent high frequency transistor performance for general purpose amplifier applications. It has a low noise figure and a high gain power rating. It has very low input capacitance and excellent thermal stability. It has low leakage breakdown voltage and high current gain.

Working Principle

The working principle of the 2N3439UA is based on the PN junction of two semiconductor materials. When a forward bias is applied to the PN junction, majority carriers will be injected from the P type side to the N type side. This action causes a large number of electron-hole pairs to be present in the N type side. These electrons and holes are then attracted to opposite sides of the PN junction, thereby forming an electric current. The magnitude of the current is then determined by the current regulator, which is connected to the base terminal. The current regulator controls the base current, which in turn controls the collector current. The emitter voltage is then controlled by the current regulator. The amount of current flowing through the collector is then proportional to the amount of current flowing through the base of the transistor. By controlling the base current, the collector current can be regulated and the voltage across the transistor can be adjusted as desired. The 2N3439UA is typically used as an amplifier in audio applications. It can also be used as a switching device in various applications such as motor control. The 2N3439UA is an efficient and reliable device for these applications.

Conclusion

The 2N3439UA is a PNP silicon planar epitaxial transistor that is commonly used in audio applications. It is designed for use in general purpose, low frequency amplifier applications, and is also suitable for use in high voltage switching and motor control applications. It features a low noise figure, high gain power rating, very low input capacitance, and excellent thermal stability, as well as low leakage breakdown voltage and high current gain. The working principle of the 2N3439UA is based on the PN junction of two semiconductor materials, and the collector current is controlled by the current regulator connected to the base.

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