2N3701 Allicdata Electronics
Allicdata Part #:

2N3701-ND

Manufacturer Part#:

2N3701

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: THROUGH-HOLE TRANSISTOR-SMALL SI
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 80MHz 1.8W Thr...
DataSheet: 2N3701 datasheet2N3701 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.8W
Frequency - Transition: 80MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Description

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2N3701 is a bipolar NPN transistor commonly used in small-signal amplification and switching. It has a reversal polarity protection feature that can help guard against reverse current caused by signals or static. The application of 2N3701 includes audio pre-amplifiers, general-purpose amplifiers, various radio frequency (RF) applications and switching.

Bipolar transistors, also known as BJT transistors, are three-terminal devices comprised of two p-n junctions. The two junctions form the transistor’s base, collector, and emitter. The collector and emitter are the two main terminals that are connected to the power supply, while the base is the input terminal. A current applied to the base can control the flow of current between the collector and emitter terminals.

A transistor typically works by letting a current flow if the voltage difference between the base and emitter is large enough to exceed the base voltage. The current between collector and emitter is proportional to the base current and is determined by the number of atoms in base terminal.

2N3701 is a Bipolar NPN transistor. It consists of a NPN Darlington pair fabricated on a single silicon chip. It has a negative temperature coefficient and can be used in applications such as audio pre-amplifiers, general-purpose amplifiers, and switching. It can provide high current gain and voltage gain. The maximum collector-emitter voltage (Vce) for the 2N3701 is 80V, and the maximum collector current (Ic) is 1.5A.

The 2N3701 is designed to be used with MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). Its internal construction allows it to provide lower operating voltages than a MOSFET, while maintaining the same power efficiency and gain. It also allows for the control of devices in medium to high power applications, such as in motor control and high-side switch applications.

The working principle of 2N3701 is based on the fact that the base-emitter voltage determines the collector current. When a small base current is applied to the 2N3701, it produces a large collector current. The collector current is proportional to the base current, with the proportionality factor being the gain. The gain of the 2N3701 can be adjusted by increasing the base current for higher gains, or decreasing it for lower gains.

2N3701 has wide application fields, from specific equipment based applications such as audio amplifiers, motor control, switching, and communication system, to general-purpose electronic components which can be applied as voltage regulators, signal amplifiers, and switch controllers.

In conclusion, the 2N3701 is a low power NPN bipolar junction transistor used for audio pre-amplifiers, general-purpose amplifiers, various radio frequency applications and switching. It can provide high current gain and voltage gain and has a wide range of applications in various electronics. The 2N3701 works by allowing a current to flow if the voltage between the base and emitter is large enough.

The specific data is subject to PDF, and the above content is for reference

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