2N3737

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2N3737 is a medium power NPN bipolar junction transistor (BJT) designed for use in general purpose low speed switching and amplifier applications. It has a maximum Collector-Emitter voltage of 30V, a maximum Collector-Base voltage of 30V, and a maximum Emitter-Base voltage of 5V. It is available in a TO-18 metal-can package and has a typical hFE of 100-1000, making it suitable for use in most general purpose low-power switching and amplifier applications.

2N3737 Application Field

2N3737 is used primarily as an amplifier and switch device. It is used in a variety of circuits, such as audio amplifiers, motor control, switching regulators, and low frequency oscillators. It can also be used as a voltage regulator switch when used in conjunction with a base resistor and a collector resistor. Its wide gain range makes it suitable for different applications requiring different amounts of amplification.

As an amplifier, the 2N3737 can be used in preamplifier, power amplifier, and power supply applications. In preamplifier applications, the 2N3737 can be used to amplify very low audio signals for use in the preamplifier stage of an audio system. In power amplifier applications, the 2N3737 can be used to amplify moderate to high power audio signals for use in higher-powered audio amplifiers. In power supply applications, the 2N3737 can be used to control on and off times of the power supply to ensure power is delivered as needed.

2N3737 Working Principle

The 2N3737 is a NPN transistor, which means that the two junctions of the transistor are reverse-biased, creating two distinct paths for electrons to travel. The base-emitter junction is forward-biased, meaning that electrons entering the base can be easily passed to the emitter by the forward-biased junction. This creates an excess of electrons at the emitter, while causing a net depletion of electrons at the base, as they are welcome in the emitter. With an input voltage connected to the base, the number of electrons entering the base will increase proportionally, allowing more current to flow between the collector and emitter and thus amplifying the input voltage.

The 2N3737 is designed for general-purpose low-speed switching and amplifier applications, which means it has a very large gain range. This is because the 2N3737 has a relatively low collector-base bias voltage of VCE(B)= -0.3V at Ib(C)=10mA, which allows more current to flow through the collector-base junction. This causes a large voltage gain through the input-to-output stage, making it suitable for use in applications requiring moderate levels of amplification.

In addition, the 2N3737 has a maximum Collector-Emitter voltage of 30V and a maximum Collector-Base voltage of 30V, allowing it to switch higher-voltage circuits without the need for additional components. It is also available in a TO-18 metal-can package and has a typical hFE of 100-1000, making it suitable for use in most general-purpose low-power switching and amplifier applications.

Overall, the 2N3737 is a versatile NPN bipolar junction transistor (BJT) with a wide gain range suitable for use in a variety of applications. Thanks to its low Collector-Base bias voltage, it is ideal for use in low-speed switching and amplifier applications.

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