Allicdata Part #: | 2N3737UB-ND |
Manufacturer Part#: |
2N3737UB |
Price: | $ 11.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 40V 1.5A |
More Detail: | Bipolar (BJT) Transistor NPN 40V 1.5A 500mW Surfa... |
DataSheet: | 2N3737UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 10.82800 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 900mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 1.5V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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The 2N3737UB is a commonly used NPN bipolar junction transistor (BJT). It is a single polarity device, which means it has just one P-N junction and is used mainly as an on/off switch. It has a low-power consumption and is highly efficient, making it ideal for use in a variety of applications. This article will discuss the application field and working principle of the 2N3737UB.
The 2N3737UB has two main application fields. The first is in discrete electronics, where it is used as an amplifier, as a switch, or in other discrete applications. This transistor is often used in multimode circuits, where it is used as an amplifier in applications that require high-gain amplification, such as audio amplifiers. The second application field is in integrated circuits (ICs), where it is used as a switch, amplifier, or in other integrated circuit functions.
The 2N3737UB is constructed of an N-type layer, sandwiched by two P-type layers. It is typically used in junction FET circuits. In this circuit, a large reverse-bias voltage is applied across the transistor. This reverse-bias voltage causes a small electric field to form at the junction of the two P-type layers. When a base current is passed through the transistor, it allows the electric field to expand. This expansion causes electrons to flow from the N-type layer to the P-type layer, forming a conduction path between the two layers. This conduction path is what allows the transistor to conduct electricity.
The strength of the base current is regulated by the voltage applied to the base of the transistor. As the voltage at the base is increased, more current is applied to the transistor, causing more electrons to flow through the conduction path. This stronger current can be used to either increase or decrease the current that is being conducted by the transistor. For example, if the base voltage is increased, the transistor will conduct more current and result in an increase in output voltage.
The 2N3737UB is also highly efficient because its reverse-bias voltage is low. This allows it to polarize in both positive and negative directions, meaning that it can be used in circuits that require both positive and negative voltages. This also results in a higher power efficiency because the ratio of output power to the input power is higher.
Finally, the 2N3737UB is known for its low-power consumption. It does not require any external power supplies to operate, unlike other transistors, which require an external power supply for operation. In addition, it has a significant advantage over other transistors in that its power dissipation can be significantly lower, resulting in less heat being generated. This makes it a popular choice in applications where low power consumption is a priority.
In conclusion, the 2N3737UB is a popular transistor that is used in both discrete electronics and integrated circuits. It is highly efficient, requires low-power consumption, and is capable of operating in both positive and negative switches. These properties make it a popular choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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