2N3771G Allicdata Electronics
Allicdata Part #:

2N3771GOS-ND

Manufacturer Part#:

2N3771G

Price: $ 2.71
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 30A TO-3
More Detail: Bipolar (BJT) Transistor NPN 40V 30A 200kHz 150W T...
DataSheet: 2N3771G datasheet2N3771G Datasheet/PDF
Quantity: 827
1 +: $ 2.46330
10 +: $ 2.21067
100 +: $ 1.81106
500 +: $ 1.54172
1000 +: $ 1.30024
Stock 827Can Ship Immediately
$ 2.71
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Power - Max: 150W
Frequency - Transition: 200kHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
Base Part Number: 2N3771
Description

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The 2N3771G transistor is a high-power N-type field transistor (Bipolar Junction Transistor or BJT) with controllable gain and is suitable for both commercial and military applications. It has a maximum collector current of 25 A, a collector-emitter voltage of 100 V, and a power dissipation of 500 W. This transistor is commonly used in low-frequency amplifiers and audio power amplifiers, especially those operating in a push-pull configuration.

This type of transistor is a three-terminal device that uses two p-n junction diodes to control current flow. The base-emitter junction is forward biased, while the base-collector junction is reverse biased. When a voltage is applied to the base, carriers are injected into the collector-base junction, causing current to flow between the emitter and the collector. This current is known as the collector current.

The transistor is operated in either an "active" or "saturated" state, which determines the collector current. In the active state, the collector current is proportional to the base current, and the current gain, also known as the collector-emitter current gain, is defined as the ratio of the collector current to the base current. In the saturated state, the collector current is limited by the collector-emitter voltage, and the gain is then determined by the device’s saturation characteristics.

2N3771G transistors are typically used in linear power amplifiers, high-power switching circuits, and high-current switching devices. They are also suitable for use in both high- and low-frequency applications, including audio power amplifiers, motor-control circuits, switching supplies, and high-voltage converters applications than need impressive power and durability. For example, they may be deployed in switching circuits, such as DC-DC amplifiers and high-voltage converters.

2N3771G transistors offer a variety of advantages, such as low power consumption, high input impedance, and low capacitance. Furthermore, they are resistant to temperature variations and can operate over a wide range of collector-emitter voltages. These and other important attributes make the 2N3771G a good choice for applications requiring high power and high accuracy, such as audio amplifiers, high-voltage converters, and motor-control circuits.

The specific data is subject to PDF, and the above content is for reference

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