2N3700UB

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The 2N3700UB is a general-purpose PNP bipolar junction transistor. It is a member of the 40V PNP Silicon Low Voltage Transistor family, part of the STMicroelectronics PNP Power Transistor family of products.

The 2N3700UB is a transistor that is extensively used in a wide range of applications such as amplifier circuits, switching circuits, and automotive applications. It is characterized by low collector-emitter saturation voltage, good gain linearity, and low noise at low collector current.

The 2N3700UB features a hFE range between 50-200, depending on the collector current. It possesses a low VCE(sat) of 300mV (typical) at a collector current of 200mA, and a low dynamic base resistance of 0.2Ω max at a collector current of 50mA. It also has a wide-temperature range up to 125°C and is highly resistant to mechanical shock and vibrations.

The 2N3700UB operates in three modes: cut-off, active and saturation. In the active region, most of the characteristics of the transistor are determined by its physical parameters such as the base-to-emitter, collector-to-base, and collector-to-emitter.

In the cut-off mode, there is no current flowing through the transistor, and the current does not increase even when the base voltage is increased. In this mode, the transistor can be used as an open switch.

In the active mode, the collector current is controlled by the base current, and the collector-emitter voltage is determined by the base-emitter voltage. The collector current is linearly proportional to the base current, and the collector-emitter voltage is linearly proportional to the base-emitter voltage.

In the saturation mode, the transistor is in its most conductive state, and the collector current is limited only by the load resistance. The transistor will remain in this mode even when the voltage applied to its base is increased further.

The 2N3700UB is suitable for a wide range of applications, including amplifier circuits, switching circuits, linear regulators, power management, and automotive applications. It is important to determine the exact application for the transistor before selecting it for a particular design.

The 2N3700UB is an ideal choice for many applications due to its wide-range temperature capability and its robust mechanical shock and vibration resistance. Its low collector-emitter saturation voltage, good gain linearity, and low noise at low collector current make it a great choice for use in a wide range of applications.

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