2N3763L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N3763L is an NPN silicon power transistor designed for use in audio amplifiers and other applications requiring high power outputs. This type of transistor is part of the Bipolar Junction Transistor (BJT) group, which is composed of an NPN and a PNP transistor. The 2N3763L is a single transistor, which means that it consists of one transistor in a single package. This transistor has a number of features that make it particularly suitable for its intended purpose.

In terms of its application field, the 2N3763L is generally used in audio amplifiers that require high power outputs, such as car stereo systems, AV receivers, and other home audio systems. It is suitable for linear amplification, with a collector current of up to 5A and a power dissipation of up to 70 watts. This makes it well-suited to medium- to high-power amplification needs.

The 2N3763L is also suitable for use in power switching circuits, such as in relays, solenoids, and motors. Its high-voltage rating and low-noise characteristics make it an ideal choice for these applications. The transistor also features low-noise emission and low-level distortion, making it suitable for use in audio amplifiers, where clarity and sound quality are of utmost importance.

The 2N3763L features a wide range of operating characteristics, including a collector-emitter breakdown voltage of up to 100 volts, a collector-base breakdown voltage of up to 100 volts, a collector current of up to 5A, and a power dissipation of up to 70 watts. It also has high gain and fast switching speeds, making it well-suited for power switching and audio amplifier applications. The transistor is also highly reliable and can be used in applications where failure cannot be tolerated.

The working principle of the 2N3763L is rooted in the junction transistors, which are composed of three layers of semiconductors, namely the emitter, base and collector. This type of transistor is usually referred to as BJT, which stands for Bipolar Junction Transistor. The principle of operation of this transistor is based on the charge carriers formed by the electrons from the base layer and the holes from the emitter layer. The movement of these charge carriers creates a current which can be controlled by the application of a voltage to the base layer.

The transistor can be used in a variety of circuit configurations, such as common-emitter, common-base, and Darlington. Depending on the configuration used, the transistor can amplify signals, switch on and off, and can have its collector current and power dissipation levels adjusted. In its common-emitter configuration, the 2N3763L is used for amplification, as its input signals can be amplified to produce high-power outputs.

In conclusion, the 2N3763L is a high-quality single NPN silicon power transistor designed for use in audio amplifiers and power switching circuits. This type of transistor belongs to the Bipolar Junction Transistor (BJT) group and consists of three layers of semiconductors. The transistor has a wide range of operating characteristics and can be used in applications where high power outputs, reliability and noise emission are of utmost importance. It is also suitable for use in audio amplification, where sound quality and clarity are paramount.

The specific data is subject to PDF, and the above content is for reference