2N3704_D26Z

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The 2N3704_D26Z is a high-performance NPN silicon switching transistor, which is a single bipolar (BJT) transistor. It is mainly used in low power switching and general purpose amplifier applications. It is designed for high-speed switching and amplification operations, which can be achieved by controlling the base current. This article will introduce the application area and working principle of 2N3704_D26Z, so that users can better use this product.

Application Field of 2N3704_D26Z

2N3704_D26Z have excellent switching performance and high gain, is widely used in low power switching, such as audio amplifiers, small signal amplifiers, function switches and various applications in digital logic circuits. Such as in audio amplifier devices need to be amplified to increase the output signal power and reduce signal distortion, in digital logic circuits of AF elements, level switching part or DC coupled buffer circuit, the operating speed of the circuit is affected by the turn-on and turn-off speed of the switch, so 2N3704_D26Z can be used.

Working Principle of 2N3704_D26Z

2N3704_D26Z is a kind of NPN transistor which composed of three parts, two P regions between two N regions. It is controlled by the voltage applied to the Base (B) and the output from the Collector (C) and Emitter (E). The NPN transistor is used as an electronic switch, operating in the saturation and cutoff region.When current controlled by the base (Ib), flows through the base-emitter junction, the electron-hole pairs created in the emitter will be forced to leave the junction and go towards the collector, carrying current through the collector (Ic). The current Ic is much larger than Ib (current gain, hFE), maintaining saturation or active biases on the Transistor.When there is no base current Ib, the junction between the base-emitter is closed, the current from the collector to the emitter is zero, this is the cutoff region. When the voltage applied to the base is greater than the junction breakdown voltage (VGB) of the Collector-Base junction, a large current will flow in the collector, this is the breakdown region.The parameters used to characterize the performance of 2N3704_D26Z are its Collector-Emitter Breakdown voltage (VCE), Maximum Collector-Base Voltage (VCEO) and Cutler voltage (VGE).

Conclusion

The 2N3704_D26Z is a high-performance NPN silicon switching transistor, it is widely used in low power switching and general purpose amplifier applications. The 2N3704_D26Z is designed for high speed switching and amplification operations which can be achieved by controlling the base current. The 2N3704_D26Z provides excellent switching performance and high gain, which can work in low power, audio amplifiers and digital logic circuits.

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