2N5555_D74Z Allicdata Electronics
Allicdata Part #:

2N5555_D74Z-ND

Manufacturer Part#:

2N5555_D74Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 25V 15MA TO92
More Detail: RF Mosfet N-Channel JFET TO-92-3
DataSheet: 2N5555_D74Z datasheet2N5555_D74Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: N-Channel JFET
Frequency: --
Gain: --
Current Rating: 15mA
Noise Figure: --
Power - Output: --
Voltage - Rated: 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5555
Description

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The 2N5555_D74Z, better known as N-Channel Depletion 400mA 60V MOSFET, is a type of FET (Field Effect Transistor) belonging to the MOSFET (Metal-Oxide-Semiconductor-Field-Effect Transistor) family. This MOSFET is designed for RF (Radio Frequency) applications. Although the 2N5555_D74Z exists in various forms, the most common one is the D74Z. A D74Z has an N-Channel architecture, which is one of the two types of MOSFETs. It derives its name from the channel type that is located in the gate region, which is an N-type (negative) semiconductor.

The 2N5555_D74Z MOSFET is used in various RF applications because it can switch a wide range, from low frequencies (through the audio range) to high frequencies (HF). This makes it a good choice for amplifying and controlling signals across a wide range of frequencies. Moreover, it performs well with different types of power sources, both AC and DC. This makes it ideal for tasks such as equalization, power control, gain control, and signal switching.

The application field of the 2N5555_D74Z is mainly related with RF amplifying and signal controlling required in a variety of digital, analog and/or mixed signal applications. This type of MOSFET has a voltage limitation of 60 Volts, with an instantaneous power rating at 400 mWatts, making it suitable for different signal amplifying and controlling needs. Furthermore, the on-resistance (RDSon) of 2N5555_D74Z is less than 12 milliohms at 4.5V, further making the MOSFET suitable for low-power RF applications. Furthermore, its low infrared radiation component makes it suitable for operational frequencies up to millions of Hertz.

The working principle of the 2N5555_D74Z is basically the same as that of any other MOSFET. When a positive voltage is applied to the gate, an N-type channel is created in the bulk of the P-type semiconductor material. This in turn allows a current flow between the source and drain. The magnitude of the current flow is determined by the voltage applied to the gate, which acts as a control element. The more voltage applied to the gate, the higher the current flow.

The 2N5555_D74Z is a type of MOSFET that can handle big signals, making it suitable for a wide range of applications requiring high-frequency signal amplification and control. Its low on-resistance and voltage limit make it an economical choice for many RF applications. Its combination of features, such as its compatibility with both AC and DC power sources, makes it an excellent choice for tasks including equalization, power control, gain control, and signal switching.

The specific data is subject to PDF, and the above content is for reference

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