Allicdata Part #: | 2N5839-ND |
Manufacturer Part#: |
2N5839 |
Price: | $ 20.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N5839 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 18.58310 |
Series: | * |
Part Status: | Active |
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Transistors - Bipolar (BJT) - Single
The 2N5839 is a bipolar junction transistor (BJT) that is used as an amplifier and switch in electronic devices. This device has an NPN structure and is designed to operate from -65 °C to +150 °C. It has a low current gain of 10, good linearity over the frequency range of 10 MHz to 600 MHz, low noise figure and low cost. Its maximum collector current is 1.5 amps and the maximum collector-emitter voltage is 80V.
The 2N5839 is well-suited for use in applications where low cost, low noise, high frequency performance and good linearity are required such as audio amplifiers and radio frequency components. In addition, it is commonly used in automotive, industrial, consumer and telecommunications applications. A few examples include power amplifiers, mixers, oscillators, frequency multipliers and drivers.
Working Principle
The 2N5839 utilizes a NPN transistor structure consisting of three regions: the base, the emitter and the collector. It works by allowing current to flow from the base to the collector by amplifying a small current in the base region to a larger current in the collector. This process is also known as current amplification.
The base is a thin material called a semiconductor connected to the emitter. The emitter supplies holes, which are the mobile “carriers” of current. The collector is a larger material in which the emitter is embedded. This material supplies electrons, which are the mobile “carriers” of current in the opposite direction than the holes. When an external voltage is applied, it creates a strong electric field between the base and the collector. This electric field causes the electrons to be pushed away from the base and towards the collector. The result is a current created between the base and the collector. This current is then amplified and transferred to the output.
The basic principle of the 2N5839 is that it amplifies an input current and transfers it through the output. When the device is used as an amplifier, this output current is used as a signal, while when used as a switch, the output current controls the flow of other incoming signals.
Conclusion
The 2N5839 transistor is a versatile media device that can be used for multiple purposes. Its high frequency performance, good linearity, low noise, and low cost make it suitable for a wide variety of applications including audio amplifiers, radio frequency components, power amplifiers, mixers, oscillators, frequency multipliers and drivers. Its NPN structure and working principle also make it an ideal choice for designers looking for low cost and low power solutions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2N5822 | Central Semi... | 1.17 $ | 1000 | THROUGH-HOLE TRANSISTOR-S... |
2N5885 | Central Semi... | -- | 10 | TRANS NPN 60V 25A TO-3Bip... |
2N5830_D26Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 0.2A TO-92... |
2N5840 | Microsemi Co... | -- | 1000 | NPN TRANSISTORBipolar (BJ... |
2N5830 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 0.2A TO-92... |
2N5838 | Microsemi Co... | 20.45 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
2N5839 | Microsemi Co... | 20.45 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
2N5871 | Microsemi Co... | -- | 1000 | PNP POWER TRANSISTOR SILI... |
2N5872 | Microsemi Co... | 22.71 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5868 | Microsemi Co... | 26.26 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5873 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5874 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5875 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5876 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5879 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5880 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5881 | Microsemi Co... | 27.22 $ | 1000 | NPN POWER TRANSISTOR SILI... |
2N5882 | Microsemi Co... | -- | 1000 | PNP POWER TRANSISTOR SILI... |
2N5883 | Microsemi Co... | 27.22 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5877 | Microsemi Co... | 27.9 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5886 | Microsemi Co... | 27.9 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N5886G | ON Semicondu... | 2.71 $ | 606 | TRANS NPN 80V 25A TO3Bipo... |
2N5885G | ON Semicondu... | 2.71 $ | 247 | TRANS NPN 60V 25A TO3Bipo... |
2N5884G | ON Semicondu... | 2.98 $ | 85 | TRANS PNP 80V 25A TO3Bipo... |
2N5883G | ON Semicondu... | 3.02 $ | 20 | TRANS PNP 60V 25A TO3Bipo... |
2N5878 | Central Semi... | 4.89 $ | 230 | TRANS NPN 80V 10A TO-3Bip... |
2N5884 | Central Semi... | 5.1 $ | 56 | TRANS PNP 80V 25A TO-3Bip... |
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