| Allicdata Part #: | 2N5874-ND |
| Manufacturer Part#: |
2N5874 |
| Price: | $ 27.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | PNP POWER TRANSISTOR SILICON AMP |
| More Detail: | Bipolar (BJT) Transistor |
| DataSheet: |  2N5874 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 24.74670 |
Specifications
| Series: | * |
| Part Status: | Active |
Description
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2N5874 is a Single Bipolar Junction Transistor (BJT) designed for various applications including amplifier and switching circuits.This device belongs to a family of complementary NPN and PNP BJTs, based on 2N5874 NPN Silicon Transistor and 2N6075 PNP Silicon Transistor. Both transistors feature a low Icbo that makes them ideal for switching applications, running in saturation region and for most amplifier designs.The 2N5874 is a NPN Silicon general purpose transistor with a low saturation voltage of 0.4 V (max). It has a maximum continuous collector current at 25 °C of 12 A and total power dissipation of 150 W at 25 °C. The SIL package of this transistor, helps reduce thermal resistance between the device and the cooling surface and thus, provides enhanced thermal performance.The 2N5874 can be used in low-frequency amplifier and switching applications, commonly with lower power applications such as relays, optoisolators and audio amplifiers. The detector and mixer applications are also supported. It is available in various packages like TO-3, TO-5 and TO-92 which has a lead count of 3.The common base configuration of 2N5874 is used as an amplifier and its common emitter configuration is used as a switch. The transistor basically acts as an interface between two different circuits, enabling the change or control in current or voltage in one side to affect the state of the other side.In the case of 2N5874, the current gain of this transistor depends on the collector current. It has a maximum NPN current gain of around 150 at Ic = 12 A. This transistor also has a good frequency response which makes it suitable for high-frequency applications. The frequency of operation depends upon the collector current, with the highest gain rating at a low current.The operating voltage for 2N5874 ranges from 6 V to 100 V, with different packages providing different power ratings. The collector-to-emitter breakdown voltage of the transistor is 100 V and the collector-to-base breakdown voltage is also 100 V. The thermal resistance is also low and it can typically withstand up to 25° C temperature rise in a junction.The 2N5874 is a silicon-based transistor that is designed to provide high power rating and good frequency response. It comes in various packages and provides excellent current gain and low thermal resistance. With a wide operating range and good switching characteristics, the 2N5874 is ideal for various low-power applications in the consumer and commercial sectors.The specific data is subject to PDF, and the above content is for reference
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