2N5880

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5880 transistor is a more powerful version of the 2N3904, both of which are members of the bipolar junction type family. This type of transistor is a general-purpose, low-power type and is used for a wide range of applications. The 2N5880 is designed for applications such as audio amplifiers, switches and converters, and is ideal for applications where stability and high current capability are required.

The 2N5880 is classified as a single-base-collector junction transistor. It is composed of three regions; the base, collector, and emitter regions. The base is a thin layer of doped silicon between two metals, one of which is the source contact and the other is the drain contact. The collector, which is a p-type region, is connected to the drain contact through an N-type material and, in turn, helps form the “reverse-biased” junction between the base and collector regions. The emitter is a p-type region connected to the collector region through an N-type contact and is responsible for the majority of the current flowing through the device. Essentially, the junction between the base and collector region allows current to flow from the collector to the base and then to the emitter, completing the transistor circuit.

The 2N5880 is also a current gain device and its power and current capabilities are far greater than those of the 2N3904. To ensure stability, it features higher collector-base and emitter-base reverse breakdown voltages than those of the 2N3904. This means that it is able to withstand higher voltages, making it ideal for applications where the circuits will often be subject to overloads. The 2N5880 also features high current output capability and can handle up to 2A of forward current, making it suitable for use in AC or DC motors, relays and other high-current applications.

The 2N5880 is an ideal device for applications such as audio amplifiers, switches, converters and other circuits where high current capability and stability are desired. It is a low-power type device and its high current and voltage capabilities make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference