Allicdata Part #: | 2N5871-ND |
Manufacturer Part#: |
2N5871 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP POWER TRANSISTOR SILICON AMP |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N5871 Datasheet/PDF |
Quantity: | 1000 |
Series: | * |
Part Status: | Active |
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2N5871 is a transistor belonging to the family of Bipolar Junction Transistors (BJTs). It is a type of single transistor, which is a three-terminal device having two main types of applications and two polarities. 2N5871 is a PNP type, which means it is an NPN type when operated under reverse bias. 2N5871 is mainly used in the fields of application like high frequency amplification, particularly in low-power audio-frequency amplifier applications, as well as in Joule-Thomson effect applications.
The working principle of 2N5871 is based on a bipolar transistor operating in the active mode. This transistor has three terminal, namely the base (B), collector (C) and emitter (E). The current passes through the base-collector junction and out the emitter by way of a majority carrier (holes in the case of PNP type), resulting in an amplified current at the collector. The amount of current amplification is usually controlled by raising the voltage at the base or by reducing the current in the emitter.
To achieve this active operating mode, proper bias voltages are provided at each of its transistors. The base-collector voltage must be greater than the base-emitter voltage and this voltage must be greater than the collector-emitter voltage so that the base-collector junction is forward biased and the base-emitter junction is reverse biased. This arrangement of voltages creates two one-way paths (with opposite conduction patterns) between the emitter and the collector, plugging the transistor into active mode.
In addition, negative temperature coefficients are used in BJTs to ensure proper operation over temperature range. By adjusting these temperatures coefficients, the transistor can reliably operate in both low temperature and high temperature ranges.
2N5871 can also used in specialized low power audio amplifier applications. Usually, a current source is replaced with a proper PNP transistor, such as 2N5871. This transistor is designed to operate with a high current gain and low noise operation, which makes it an ideal choice for low-power amplifiers. It can also be used in Joule-Thomson effect applications, where it can be used to accurately measure very small changes in air temperature by applying a constant current through a resistor connected between the base and collector terminals of the transistor.
In conclusion, 2N5871 is a PNP type bipolar junction transistor (BJT) often used in high frequency amplification and low-power audio-frequency amplifier applications. Its working principle is based on the active operating mode of the device, in which proper bias voltages must be provided to achieve two paths between emitter and collector, with the base-collector junction being forward biased and the base-emitter junction being reverse biased for proper current amplification. It is also used for specialized low power audio amplifier applications as well as for Joule-Thomson effect applications.
The specific data is subject to PDF, and the above content is for reference
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