Allicdata Part #: | 2N5886GOS-ND |
Manufacturer Part#: |
2N5886G |
Price: | $ 2.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 25A TO3 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 25A 4MHz 200W Thr... |
DataSheet: | 2N5886G Datasheet/PDF |
Quantity: | 606 |
1 +: | $ 2.46330 |
10 +: | $ 2.21067 |
100 +: | $ 1.81106 |
500 +: | $ 1.54172 |
1000 +: | $ 1.30024 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 25A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 6.25A, 25A |
Current - Collector Cutoff (Max): | 2mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10A, 4V |
Power - Max: | 200W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204 (TO-3) |
Base Part Number: | 2N5886 |
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.2N5886G is a type of general-purpose bipolar junction transistor (BJT) used in various applications. It belongs to the single transistor category, making it a suitable choice for small-signal amplification and switching. As a PNP transistor, the 2N5886G has two N-type regions and a P-type region. Its high current gain and low saturation voltage have made it a popular choice for many applications, including in audio amplifiers, radio frequency amplifiers, and other power supply circuits.
One of the most common applications for the 2N5886G is as an audio amplifier in audio systems. The transistor\'s high current gain allows it to amplify audio signals without having to increase the power supply voltage significantly. Additionally, the 2N5886G\'s low saturation voltage ensures that the amplifier has a low-noise floor, resulting in an overall improvement in audio quality. In radio frequency amplifiers, the 2N5886G can effectively amplify small signals with minimal current consumption. Its high current gain and low-noise performance make this transistor an ideal candidate for radio frequency applications.
In order to understand how the 2N5886G works, it is important to understand the nature of bipolar transistors. A bipolar transistor is composed of two PN-junction diodes, one of which is connected in a reverse direction. A small current at one end of the junction is amplified by another current at the other end. This current amplification is enabled by the transistor\'s base-collector junction, which is driven by the base current. As the base-collector junction is forward-biased, the amplifier produces a high current at the collector and a low current at the emitter. This in turn produces an overall current gain, often referred to as beta.
In addition to its audio and radio frequency applications, the 2N5886G is often used in power supply circuits. Its low saturation voltage ensures that the designs are more efficient and reliable, reducing power consumption and extending the life of the circuit. Furthermore, the 2N5886G\'s high current gain allows it to effectively amplify small-signal changes in the voltage and current of the power supply. This makes it an ideal choice for many applications, including in power supply circuits and power converters.
The 2N5886G is a versatile transistors, which makes it suitable for use in a variety of applications. Its high current gain and low saturation voltage have made it popular for audio and radio frequency amplifiers, while its efficiency and reliability make it an ideal choice for power supply circuits. The 2N5886G is an attractive option for designers looking for a reliable, high-performance bipolar junction transistor.
The specific data is subject to PDF, and the above content is for reference
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