2N5873

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The 2N5873 is a PNP transistor in a TO-66 package that belongs in the single bipolar junction transistor (BJT) type. It is manufactured by Motorola Inc, and comes with a high voltage rating and large current capacities which makes it suitable for a range of applications.

It is primarily used as an amplifier or switch and can operate from collector currents from 200 mA up to 4.5 A. It can have peak output power up to 80 Watts. It has a collector-base voltage of 60 V and a collector-emitter voltage of 40 V. The voltage gain of the device is quite low and is typical, a hfe of around 20.

2N5873 Application Fields

The 2N5873 transistor is commonly used in linear amplifier, switching applications particularly in low power, high frequency applications. It is ideal for applications in telecommunications and audio systems, such as amplifiers, modulators, and multiplexers. It is also used in audio and video systems, such as amplifiers, preamps, delay lines, EQs, or on-board power amplifiers for loudspeakers. It is frequently used in high current, low voltage applications and is often selected for its reliability and stability, which makes it suitable for industrial equipment or biomedical devices.

2N5873 Working Principle

The 2N5873 works because when a voltage is applied to the base of the transistor, current flows in the collector base junction and this current is amplified in the collector circuit. The collector current is controlled by the base current and this current is used to drive the collector current. The voltage on the collector-emitter terminal (Vce) is the main output voltage of the transistor while the voltage on the collector-base junction (Vcb) is a measure of the gain of the circuit.

When voltage is applied at the base electrode of the transistor, it creates a depletion region in the collector-base junction, due to the flow of charge carriers between the two junctions. The thickness of the depletion region is controlled by the amount of current flowing through the base and collector connections. The current flow across the collector-base junction results in an amplified output at the collector-emitter terminal.

The DC current gain of the device, or hfe, is the ratio of collector current (Ic) over base current (Ib). The hfe of the device is typically between 20-30, which means that for every 1mA of base current applied, the collector can provide about 20-30mA of current. This makes the device suitable for applications such as low power linear amplifiers or switching applications, as the device is able to handle a wide range of current supply.

The main advantage of using a 2N5873 is that it can operate in relatively high voltages without the need for an external bias voltage. This makes the device suitable for applications in telecommunications and audio systems where high voltages are often encountered. Additionally, the device is quite robust, making it suitable for use in industrial equipment and medical devices.

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