2N5886

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5886 is a high frequency, high voltage bipolar junction transistor (BJT). It is a single device that operates in the range of 10 to 100 MHz. It is commonly used in audio amplifiers, switching circuits, RF amplifiers, and other medium to high frequency circuits. This device has a voltage rating of up to 135V, making it a suitable choice for high voltage applications.

The 2N5886 has a metal can package, which allows for reliable and robust operation in an environment where heat is generated due to high power transistors. This device also has a low noise figure, making it suitable for use in radio frequency (RF) systems. The 2N5886 has a high current gain (hFE) of up to 400, making it suitable for power amplifier applications.

The 2N5886 is a NPN silicon transistor made with a vertical doping structure for improved performance. The NPN structure allows for current to flow from the collector to the emitter. The device also has a low base to emitter saturation voltage, which contributes to its high efficiency.

The working principle of the 2N5886 is based on the operation of a bipolar junction transistor (BJT). In this device, the base region of the transistor is used to control the flow of current between the emitter and collector regions. For the device to be fully on, the base region must be adequately forward biased, which means it must receive the right amount of current. If the base region is not sufficiently forward biased, the current through the transistor will be low. The collector current is controlled by the amount of current that flows in the base region.

The 2N5886 can be used in a variety of applications. It is commonly used in switching circuits, audio amplifiers, RF amplifiers, and other medium to high frequency circuits. It is also suitable for high voltage applications due to its high voltage rating and for power amplifiers due to its high current gain. Additionally, it is useful in radio frequency (RF) systems due to its low noise figure.

Overall, the 2N5886 is a high performance, high frequency, high voltage bipolar junction transistor. It is suitable for a range of applications including audio amplification, switching circuits, RF amplifiers, and other medium to high frequency circuits. It is also suitable for high voltage and high current applications due to its high voltage rating and high current gain. Finally, it is useful in radio frequency (RF) systems due to its low noise figure.

The specific data is subject to PDF, and the above content is for reference