2N5872 Allicdata Electronics
Allicdata Part #:

2N5872-ND

Manufacturer Part#:

2N5872

Price: $ 22.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PNP POWER TRANSISTOR SILICON AMP
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N5872 datasheet2N5872 Datasheet/PDF
Quantity: 1000
100 +: $ 20.63880
Stock 1000Can Ship Immediately
$ 22.71
Specifications
Series: *
Part Status: Active
Description

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The 2N5872 is a silicon PNP bipolar junction transistor designed for general-purpose switching and amplifier applications. This transistor is useful in applications ranging from low-voltage, low-power digital and analog circuits up to high-voltage, high-power RF and microwave circuits. The 2N5872 can also be used in other applications such as DC-to-DC converters,Class C high efficiency amplifiers, and logic function drivers.

A bipolar junction transistor (BJT) consists of three regions of semiconductor material, a base region, an emitter region and a collector region. When forward biased, charge carriers (electrons and holes) move between the emitter and collector regions, and the base region controls the current flow. A silicon PNP bipolar junction transistor, such as the 2N5872, works in such a way that when the base-to-emitter junction is forward biased, the collector-to-emitter voltage starts to drop due to the flow of current through the base region. The voltage drop is limited by the current gain (hFE) of the transistor, which is the ratio of collector current to base current.

The 2N5872 is a general purpose device with an operating frequency range of up to 25MHz and a continuous collector current rating of up to 0.5A. It has an hFE of 30 to 300, a Collector-Emitter voltage rating of up to 40V and a Base-Emitter voltage rating of up to 3V. It is available in a TO-92 package, which is a plastic encapsulation with three leads for easy mounting on the PCB. With its low power requirements and wide operating temperature range, the 2N5872 is suitable for use in a variety of applications such as amplifiers, timers, logic circuits, and other general purpose switching applications.

The 2N5872 has a number of advantages over other types of transistors such as its low power requirements, wide operating temperature range, and low cost. Additionally, the device is available in a variety of packages and its leads are easier to make connections with than other types of transistors.

The 2N5872 is commonly used in RF and microwave circuits, DC-to-DC converters, and Class C high efficiency amplifiers. It is also used in digital and analog circuits, logic functions drivers, and other general purpose switching applications. This transistor is a good choice for low-power applications and its operating temperature range makes it suitable for use in extreme environments.

Overall, the 2N5872 is a low-power, general-purpose switching and amplifier transistor for applications ranging from low-voltage, low-power digital and analog circuits to high-voltage, high-power RF and microwave circuits. With its wide operating temperature range, low-cost, and easy mountability, the 2N5872 is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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