2N6317 Allicdata Electronics
Allicdata Part #:

2N6317-ND

Manufacturer Part#:

2N6317

Price: $ 20.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 7A TO-213AA
More Detail: Bipolar (BJT) Transistor PNP 60V 7A 90W Through H...
DataSheet: 2N6317 datasheet2N6317 Datasheet/PDF
Quantity: 1000
100 +: $ 19.04300
Stock 1000Can Ship Immediately
$ 20.95
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Power - Max: 90W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Description

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The 2N6317 is a general purpose, medium power, NPN bipolar junction transistor (BJT). It is widely used for a variety of applications, ranging from power amplification to switching, and provides the user with an economical, low-noise, high-reliability solution. In this article, the application fields and working principles of the 2N6317 will be discussed.

General Information and Specifications

The 2N6317 is part of the 2N6170 to 2N6319 NPN low-noise general purpose transistors series. It is a monolithic integrated circuit (IC), encapsulated in a hermetically sealed TO-37 metal package. It has a maximum operating temperature of 200°C, a collector-emitter voltage (Vce) of 20V, and a collector cut-off current of up to 10mA. The hFE range is between 200 and 500, and its power rating is 2W.

Applications

The 2N6317 is a very versatile device used in many different types of applications due to its relatively low noise, high reliability, and low cost. The most common applications for the 2N6317 include:

  • Radio Frequency (RF) amplifiers
  • Audio amplifiers
  • Small-signal amplifiers
  • Mixer and oscillator circuits
  • Switching circuits

The 2N6317 is also used as an input buffer in motor speed control, frequency synthesizers, and current sensing circuits. It is also used in digital circuits to amplify low voltage signals. The 2N6317 is particularly well-suited to these types of applications due to its low noise and high reliability.

Operation

The 2N6317 is a NPN type BJT. A BJT is a three terminal device that consists of a base, collector, and emitter. In a BJT, the base current (iB) controls the collector-emitter current (iC-E) in a current gain ratio known as the Beta or hFE. The 2N6317 has a Beta or hFE range of 200 to 500, meaning that for every unit of base current, the collector-emitter current can be up to 500 times higher. The base-emitter voltage (VBE) of the 2N6317 is typically between 0.7V and 1V.

Conclusion

The 2N6317 is a general purpose, medium-power NPN BJT. It is used for a variety of applications, ranging from power amplification to switching, and provides the user with an economical, low-noise, high-reliability solution. It has a Beta or hFE range of 200 to 500, and a base-emitter voltage (VBE) of 0.7V to 1V. It is most commonly used as an input buffer in motor speed control, frequency synthesizers, and current sensing circuits, as well as in audio amplifiers, RF amplifiers, small-signal amplifiers, mixer and oscillator circuits, and switched circuits.

The specific data is subject to PDF, and the above content is for reference

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