2N6353 Allicdata Electronics
Allicdata Part #:

2N6353-ND

Manufacturer Part#:

2N6353

Price: $ 21.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N6353 datasheet2N6353 Datasheet/PDF
Quantity: 1000
100 +: $ 19.23110
Stock 1000Can Ship Immediately
$ 21.15
Specifications
Series: *
Part Status: Active
Description

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2N6353 is a monolithic, silicon epitaxial-base NPN power transistor of the single type and is intended for use in medium-to-high power applications and in general-purpose switching and Darlington circuits. It is widely used in loads and power supplies and is a popular choice for many circuit designers. This article will take a closer look at the application fields and working principles of the 2N6353.

Application Fields

The 2N6353 is designed for high power switching and has excellent performance parameters, making it an ideal choice for use in higher power applications. It can be used in analog-type switching circuits and current amplifiers, as well as in energy conversion circuits. It is suited to applications such as lighting control, motor drive control and PWM (pulse-width modulation) speed control, as well as other applications in which high-power switching is required.

It can also be used in relay replacement and general-purpose switching applications, as well as in motor control and power supply applications, where it can significantly reduce switching losses and improve overall efficiency. Its maximum collector current rating of 5 A, its high current gain, and its low voltage drop make it ideal for use in power switching circuits.

Working Principle

The 2N6353 is an NPN transistor, meaning that it works through the use of what is known as "collector-base" injection. In this type of transistor, current flowing in the base-to-collector direction causes a voltage drop between the base and the collector, which in turn results in current flowing in the emitter-to-collector direction. This type of transistor is also known as a "depletion-mode" transistor, as it can only conduct current in the absence of a driving voltage.

The 2N6353\'s high-power switching capabilities are largely due to the fact that its current gain (hFE), when operating in the saturation region, is very large. This means that even a small base current can be multiplied many times to drive a high collector current. Additionally, its low collector-emitter saturation voltage is advantageous in switching applications as it helps to reduce power losses and improve efficiency.

The 2N6353 is also notable for its high-current gain—with a maximum current of 5 Amps—and its low forward voltage drop, which helps to reduce losses when switching. Additionally, it has a low collector-emitter breakdown voltage—40 volts—making it suitable for use in low voltage circuits. The maximum collector-base voltage rating of 100 volts also makes it suitable for use in medium and high voltage circuits.

Conclusion

The 2N6353 is a versatile and popular choice for many applications, particularly those requiring high power switching. Its design allows for a high current gain, low voltage drop, and low collector-emitter saturation voltage, making it well suited to a variety of applications. Its ability to handle high current make it ideal for motor control and power supply applications as well as for switching applications, providing designers with a reliable and efficient device for their circuit requirements.

The specific data is subject to PDF, and the above content is for reference

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