2N6387G Allicdata Electronics
Allicdata Part #:

2N6387GOS-ND

Manufacturer Part#:

2N6387G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 60V 10A TO220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 10A ...
DataSheet: 2N6387G datasheet2N6387G Datasheet/PDF
Quantity: 84
Stock 84Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: 2N6387
Description

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2N6387G is a single-chip NPN transistor made of silicon and is designed to be used in general level operation. It is widely used in wide range of electronic applications, including amplifying digital signals, power control and switching in digital circuits, driving LEDs, and switching a wide range of electrical and electronic products. The chip has a working voltage of 30 volts and a peak collector power dissipation of 500 mW (maximum).

The structure of a 2N6387G transistor is made up of three layers of semiconductor material, known as the emitter, base, and collector. The base is the middle layer, and is the switching element for the device, allowing for current flow from the emitter to the collector when the base is forward-biased. When the base is reverse biased, it blocks current from the collector, effectively blocking it from the emitter.

The current gain of a 2N6387G transistor is usually measured in terms of hFE, which is the ratio of collector current to base current. This means that with a high gainsetting, more current is output when a small current is input. A 2N6387G typically has an hFE of around 350, meaning that it can provide a gain of up to 350 times the base current.

2N6387G transistors are also designed with a high frequency response, making them suitable for high-speed applications such as radio frequency (RF) amplification. A 2N6387G has a frequency response of about 200MHz, making it capable of operating at frequencies up to this point. This means that it can provide higher frequencies of sound and other signals, making it suitable for audio applications, as well as providing additional power for signals that require it.

The 2N6387G transistor is commonly used to construct power-switching circuits, as well as for amplifying radio signals. When used in a power-switching circuit, it can be used to switch a DC voltage at a high frequency, such as in switching a TV or an audio amplifier. It is also used to amplify radio signals, increasing their power or sensitivity.

A 2N6387G transistor is also excellent at providing amplification in high-impedance (RF) circuits. When used in these circuits, it can provide better signal-to-noise ratio and higher linearity than other types of transistors. This makes it a great choice for amplifying high-speed data and RF signals, as the low noise and high linearity makes it more efficient at amplifying signals.

2N6387G transistors can be found in many electronic devices, and can be used in both digital and analog circuits. They are reliable and robust, making them suitable for long-term use in electronics applications. With their high current gain, frequency response, and versatility, they are an excellent choice for many types of electronics projects, both small and large.

The specific data is subject to PDF, and the above content is for reference

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