2N6388G Allicdata Electronics
Allicdata Part #:

2N6388GOS-ND

Manufacturer Part#:

2N6388G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 80V 10A TO220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 10A ...
DataSheet: 2N6388G datasheet2N6388G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: 2N6388
Description

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Bipolar Junction Transistor (BJT) transistors are typically three-terminal semiconductor devices that can be used as a current-amplifying device. Bipolar Junction Transistors or BJTs come in many varieties, but the most common type is the NPN type, which is a common type of 2N6388G. The 2N6388G can be used in a variety of applications and is known for its high performance capabilities. In this article, we will discuss the application fields and working principle of 2N6388G.

The 2N6388G is a high-power NPN BJT device. It is often used in high-voltage applications, as it is able to handle up to 800V of collector-emitter voltage and can operate at up to 800mA of collector current. This makes it ideal for applications that require high-voltage and high-current capabilities, such as power converters, motor drive circuits, and other high-power industrial devices.

The 2N6388G has several advantages over other types of transistors. First, it is extremely reliable, able to withstand high application temperatures and can be used in a variety of environmental conditions. Additionally, the 2N6388G consumes less power than other transistors, making it ideal for applications where power efficiency is important. It also has excellent noise immunity, ensuring that signals remain robust and reliable over long distances.

In terms of its application fields, the 2N6388G is often used in high-power RF circuits. It is also capable of being used for audio power amplification, high-speed switching, and motor control, among other applications.

The working principle of the 2N6388G is based on the same principle as all other bipolar Junction transistors. The principle is based on the fact that a transistor is capable of controlling current by using a small base current to control a larger current. The current, or current gain, is proportional to the ratio of base current to collector current. Therefore, by varying the resistance in the base circuit, a precise amount of current can be controlled in the collector circuit.

The 2N6388G has a maximum current gain of up to 100 and is designed with a fast switching speed. It is important to note that the current gain of the 2N6388G is not constant; it decreases with increasing collector current. Therefore, it is important to select a collector-emitter voltage that is suitable for the specific application. Additionally, it is important to remember that the collector-emitter voltage of the 2N6388G can vary significantly depending on the temperature and ambient conditions.

In conclusion, the 2N6388G is a high-power NPN BJT device, often used in high-voltage and high-current applications. It is designed for high performance and has a maximum current gain of up to 100. The 2N6388G is capable of switching fast and has excellent noise immunity, making it ideal for applications that require robust signal transmission over long distances. Furthermore, its power efficiency ensures that it is suitable for power-intensive applications with limited space or budgets.

The specific data is subject to PDF, and the above content is for reference

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