Allicdata Part #: | 2N6341-ND |
Manufacturer Part#: |
2N6341 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 150V 25A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 25A 40MHz 200W T... |
DataSheet: | 2N6341 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 25A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 2.5A, 25A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10A, 2V |
Power - Max: | 200W |
Frequency - Transition: | 40MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204 (TO-3) |
Base Part Number: | 2N6341 |
Description
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2N6341 Application Field and Working PrincipleThe 2N6341 is a PNP bipolar junction transistor commonly used in digital and analog circuits. It is a reliable device, featuring high power and low on-resistance characteristics. This device is highly-rated in applications where current amplification is required. It is suitable for both low and high frequency applications such as amplifiers, oscillators, and other high current circuits.The 2N6341 is made out of a N-Type substrate, a collector and a base region. The collector and the base are connected to each other through an N-Type region, which acts as a connection between the two layers of the transistor and allows a voltage to be applied from the base to the collector.To understand the working principle of the 2N6341, it is important to understand the properties of a transistor. A transistor is essentially a three layer device consisting of a collector, base, and emitter. A small electrical current applied at the base will be amplified and will travel across the emitter-collector junction of the transistor. Depending on the size of the base current, the collector current will be affected. The amplification factor of the device is determined by current gain; this is the ratio between the collector current to the base current or hFE.The 2N6341 is a high current density, low power consumption device, capable of providing up to 5 Amps continuous collector current. It is capable of operating at frequencies up to 10 MHz with a decent phase response. Its high output current capability makes it an ideal device for switching, power supply, and CPU applications that require reliable, high current, and low power consumption.The 2N6341 main characteristic is its high input impedance. This is important in applications that require a device to isolate the output from the input and protect the input from high voltage levels. For instance, in power supply applications, the transistor acts as a buffer for the power input and the output is isolated from any disturbances in the power supply.The 2N6341 also features good linearity, meaning it will respond closely to the input signals and its output will closely follow the input without any nonlinear distortion. The linearity of the device is important in applications such as audio amplifiers, where the device should provide a faithful reproduction of the input signal without nonlinear distortions or coloration.Because of its low power consumption, low distortion, and high linearity, the 2N6341 is ideal for power supply, audio, and digital circuits. It is also used in many types of circuits, such as radio transmitting circuits, computer controlled circuit boards, and telephone lines. The 2N6341 is a versatile device that can be applied to many different types of applications. It is also reasonably priced and easy to source. If you are looking for a reliable, low power consuming, and high current capacity device, the 2N6341 is a great choice.The specific data is subject to PDF, and the above content is for reference
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