Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	--
Current - Collector (Ic) (Max):	--
Voltage - Collector Emitter Breakdown (Max):	--
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Power - Max:	--
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-78-6 Metal Can
Supplier Device Package:	TO-78-6

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2N6502 Application Field and Working Principle

The 2N6502 is a type of transistor array that consists of multiple bipolar junction transistors (BJT). It is used in a variety of applications, such as in digital logic and signal processing circuits, analog signal amplifiers and power supply circuits. The 2N6502 also finds its use in RF amplifiers, oscillators and switching circuits.The 2N6502 is a high performance, integrated chip package containing five individual high speed transistors. The device offers excellent switching and interfacing capabilities, is temperature and humidity hardened, and is stable even in severe ambient conditions. It also provides very low on-state and switching losses, making it ideal for portable and other low power applications. The device can be used in single-ended and bridge configurations, making it suitable for a variety of applications, such as power switch circuits and analog signal amplifiers.The 2N6502 uses the two-layer semiconductor junction technology (TLSJ) transistor array configuration. This configuration provides excellent heat dissipation, higher switching speeds and improved overall performance at high frequencies. The device provides protection against over-voltage and reverse voltage surges, while ensuring that the power dissipation is kept within a safe operating range.The 2N6502 is based on a monolithic integrated circuit that can be used in the frequency range of 0.5 to 10 MHz. This enables the device to be used in both analog and digital systems. To ensure reliable operation, the 2N6502 is built using reputable components and packaging.The two-layer semiconductor junction technology (TLSJ) transistor array configuration is used to design the 2N6502. This enables the device to transfer a larger current from one transistor to another in the same package. This has the advantage of providing higher power handling capabilities and better performance at extreme temperatures or environmental conditions.The 2N6502 has a wide range of applications, including in digital logic, signal processing, and power supply circuits. It is also used as an amplifier in RF amplifiers, oscillators, and switching circuits. This device is temperature and humidity hardened, offering excellent temperature and humidity performance even in harsh environmental conditions. The working principle behind the 2N6502 is that the current between one transistor and the other is controlled by altering the supply voltage of each of the individual transistors. This can be done either through the use of a control circuit (such as a voltage regulator) or by changing the base-emitter voltage of the transistors themselves. The range of current and power handling of the 2N6502 can also be adjusted by altering the supply voltage.In conclusion, the 2N6502 is a high performance bipolar junction transistor (BJT) array device that is used in a variety of applications, from digital logic and signal processing circuits to analog signal amplifiers and power supplies. It is based on two-layer semiconductor junction technology and is radiation hardened, making it ideal for a range of applications in both digital and analog systems. The device is temperature and humidity hardened, ensuring reliable operation even in harsh environmental conditions. The 2N6502 offers excellent switching and interfacing capabilities and can be used in a single-ended or bridge configuration, offering flexibility for a variety of applications.

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