Allicdata Part #: | 2N6517RLRAG-ND |
Manufacturer Part#: |
2N6517RLRAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 350V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625... |
DataSheet: | 2N6517RLRAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 50mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N6517 |
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The 2N6517RLRAG is a low-power, high-voltage silicon NPN transistor. It is designed for use with a variety of analog and digital applications, including power switching, current sensing, motor control, and pulse-width modulation circuits. It is also suitable for RF amplifier and oscillator applications.
The 2N6517RLRAG is an integrated package of a transistor and several resistors. It is designed to provide a simple, cost-effective solution in applications where several components would otherwise be required. This package of components provides users with the convenience of having all of the components required for a circuit in one housing.
The 2N6517RLRAG is made from a PNPN heterojunction structure. Its PNPN structure allows for a higher blocking voltage than achieved with other single-pole configurations such as a PNP or NPN. Additionally, the package design provides for low-inductance leads that minimize EMI and give a higher circuit Q.
The 2N6517RLRAG is designed to be used in conjunction with a DC voltage source. When the source voltage is applied to the device, electrons are attracted to the N-type base regions of the PNPN structure, making it a conducting material. Due to the high potential concentration of electrons at the base regions, a current path is formed between the emitter and collector, supplying current to the collector load. Therefore, the current flow is regulated due to the presence of the N-type material in the base region, which blocks large voltage fluctuations. This is how the device produces its linear output, providing for efficient and accurate current regulation.
The 2N6517RLRAG is typically used in a switch mode power supply. In a switch mode power supply, it is used in the feedback loop that adjusts the switch conduction rate based on the output voltage. It provides highly sensitive and accurate voltage regulation, ensuring that the power supply is stabilized to within tight voltage regulation limits.
In motor control applications, the 2N6517RLRAG is used to control the speed of the motor by adjusting the frequency of the input. By adjusting the frequency, the motor speed can be made to oscillate between the upper and lower speed limits. This allows for precise motor control, enabling the device to be used in applications such as motorsport racing or precision industrial machinery.
Finally, the 2N6517RLRAG may also be used as an amplifier or oscillator in RF applications. When used as an amplifier, it provides accurate voltage and current control, allowing for higher levels of gain than achieved with other amplifiers. When used as an oscillator, it can be adjusted to operate at different frequencies, further expanding its application range.
In summary, the 2N6517RLRAG is a highly versatile transistor. It can be used for a variety of different applications, making it suitable for a wide range of applications. Its integrated package design makes it an ideal solution for those looking for an efficient and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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