2N6517BU Allicdata Electronics
Allicdata Part #:

2N6517BU-ND

Manufacturer Part#:

2N6517BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 350V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625...
DataSheet: 2N6517BU datasheet2N6517BU Datasheet/PDF
Quantity: 6245
Stock 6245Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N6517
Description

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The 2N6517BU, also known as the NTE6517BU, is a signal transistor manufactured by General Electric, specifically designed for amplifying and switching applications in single logic amplifiers and interstage coupling.
This BJT (Bipolar Junction Transistor) is a single component built of a silicon NPN epitaxial silicon transistor with a gain of about 20, at a maximum collector current of 300 mA. It is a low noise and high speed device, suitable for a variety of applications.

2N6517BU Application Field

The 2N6517BU can be found in electronic circuits and systems from amplification, noise cancellation, signal filtering, and power amplification, to switching and signal switching, as well as speed dependent applications.
This component is used in the construction of things like audio amplifiers, communications power supplies, instrumentation hardware, video amplifiers, CCTV (Closed Circuit Television) equipment, digital media players, and many more.

The 2N6517BU has one of the highest frequency rates among all BJT style transistor, which makes it suitable for use in projects that don\'t require fast switching times. It can be safely operated at higher operating temperatures and voltages than many other BJT parts, making it a great choice for those applications that require a more robust part.

2N6517BU Working Principle

The working principle of the 2N6517BU is relatively simple. It consists of three basic components: the N-Type Base, the PNP Base, and the Collector-Emitter path. These components are independently accessible, enabling the user to engage with the distinct parts of the component without relying heavily on the adjacent parts of the transistor device. To operate the component, a voltage needs to be applied to the base of the transistor, with the collector hooked up to a load. The electrons flow from the emitter to the collector, which results in the functioning of the device.

To increase the performance of the 2N6517BU, the user can experiment with other parameters like switching times, alternating currents, temperature limit, and more. This component can handle different types of signal levels, making it suitable for a variety of applications, such as signal amplification and signal switching.

Conclusion

Overall, the 2N6517BU is a single component transistor manufactured by General Electric, suitable for many signal amplification and signal switching projects. The component is robust and has a high frequency rate, making it an excellent choice for applications that require fast switching times. The component is a three component component, consisting of a N-Type Base, a PNP Base, and a Collector-Emitter path. Finally, the 2N6517BU is a great component for those electronics projects that require robust, high frequency, and high temperature components.

The specific data is subject to PDF, and the above content is for reference

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