2N6517G Allicdata Electronics
Allicdata Part #:

2N6517GOS-ND

Manufacturer Part#:

2N6517G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 350V 0.5A TO92
More Detail: Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625...
DataSheet: 2N6517G datasheet2N6517G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N6517
Description

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2N6517G is single bipolar junction transistor (BJT) transistors, also known as PNP transistors. It is designed for use in applications that require high voltage, high breakdown voltage and high gain performance as well as low power consumption. It has a preferred maximum collector-emitter voltage (Vcemax) of 90V, Breakdown voltage range of 50V – 200V, Maximum collector current (Icm) of 2A, Maximum collector power dissipation (Pcm) of 15W and Hfe of 50 - 100 at ≤ 2A.

The 2N6517G transistor has two main leads -- the collector and the emitter, usually identified by the symbols C and E, respectively. The third lead is the base which allows current to flow between the other two leads. The polarity of the device is indicated by the arrow symbol etched on the surface of the transistor near the base lead. PNP transistors have an arrow pointing toward the emitter, while NPN transistors have an arrow pointing toward the collector. Thus, 2N6517G being a PNP type transistor has the arrow pointing at the emitter.

The working of the 2N6517G transistor can be explained using the n-p-n transistor equivalent circuit. When the base of the transistor is connected to positive voltage with respect to the emitter, it makes the potential of the base region greater than the potential of the emitter, resulting in an electric field to develop between the two regions. This electric field attracts holes from the emitter and makes them move through the base region to the collector. The holes also attract electrons from the base and suck them into the collector region. This is turn, results in the current flow through the transistor, from collector to emitter.

The 2N6517G has a wide range of applications where high voltage, breakdown voltages and high gain are required. Some of those applications include audio amplifiers, voltage regulators, power management devices, audio transistors, switching devices, motor drivers, and logic gates. It is also used as a switch in DC motor control circuits to switch the motor on and off. It can also be used to control the speed of the motor.

Furthermore, 2N6517G can also be used in power supplies, phase locked loops, oscillators, comparators, integrators and other analog applications. It can also be used as a switching element for switching AC loads in consumer electronic appliances. The 2N6517G’s nominal current handling capability of 2A and breakdown voltage of 50-200V makes it suitable for operation in a wide range of industrial, commercial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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