2N6520RLRAG Discrete Semiconductor Products |
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| Allicdata Part #: | 2N6520RLRAGOSTR-ND |
| Manufacturer Part#: |
2N6520RLRAG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 350V 0.5A TO92 |
| More Detail: | Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625... |
| DataSheet: |  2N6520RLRAG Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 350V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 50mA, 10V |
| Power - Max: | 625mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | 2N6520 |
Description
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The 2N6520RLRA is a 100V NPN transistor made of silicon material, designed for use in applications such as high-speed switching and amplifier circuits. It is manufactured in a 3-pin TO220 package, and is of the single, bipolar junction transistor (BJT) family. It is an NPN transistor, with a maximum Collector-Emitter Voltage (VCEO) of 100V, a maximum Collector-Base Voltage of 150V, and a maximum Collector current of 8A.In terms of its electrical characteristics, the 2N6520RLRA has a high collector-emitter breakdown voltage of 100V and a low collector-emitter saturation voltage of 0.4V. It also has a high current gain hFE of 120. In terms of the physical characteristics, it has a rated power dissipation of 2.4W and a thermal resistance of 0.84 degree Celsius/W.The 2N6520RLRA is typically used in high-voltage, high-current applications where its fast switching capability is highly advantageous. Common uses include amplifiers, current regulators, high-voltage battery chargers, voltage converters, power supplies, and AC inverters.The working principle of the 2N6520RLRA is based on that of the PN junction diode. It consists of three layers of semiconductor material, the base layer, the emitter layer, and the collector layer. When current flows through the base layer, it creates a depletion region on the base-emitter junction, allowing current to flow from the collector to the emitter. This current flow is controlled by the voltage applied to the base terminal. The current through the collector-emitter junction is controlled by the voltage applied to the base-emitter junction.The basic operation of the 2N6520RLRA is as follows. When a voltage is applied to the base terminal and the emitter is more positive than the collector, a small current flows through the base. This current flows through the emitter-base junction, creating a depletion region on the junction that allows current to flow from the collector to the emitter. This current is controlled by the voltage applied to the base terminal, which is known as “bias”.The current is then amplified by the transistor’s gain, which is the ratio of collector current to the base current. This current can then be used to control various other electrical devices, such as switches, motors and relays.The 2N6520RLRA is a reliable device, as it has very good electrical and thermal characteristics. It has a low on-state resistance and can withstand a high amount of power dissipation. It also has a wide operating temperature range and is capable of operating at high frequencies. However, it is not suitable for high-frequency switching applications due to its low maximum switching frequency of 10kHz.The 2N6520RLRA is an inexpensive device, making it ideal for numerous applications that require a low cost of ownership. It is also relatively easy to use and has excellent electrical and thermal characteristics, making it a reliable device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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