Allicdata Part #: | 2N6517CBU-ND |
Manufacturer Part#: |
2N6517CBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 350V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625... |
DataSheet: | 2N6517CBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 50mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N6517 |
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2N6517CBU is a NPN Bipolar Junction Transistor (BJT) designed for general purpose, low-frequency small signal amplification and switching applications. This high-performance bipolar technology is designed to provide a combination of high gain and high power output for a wide range of circuit designs. This device has a wide range of applications, and it is used in a variety of power amplifiers, converters, buffers, and other similar circuit designs.
The 2N6517CBU is a single BJT, meaning that it is made up of only one base, one collector, and one emitter. This three-terminal device is typically identified by its type number, 2N6517CBU. To identify the type number, it is simply the transistor number followed by an alphanumeric code that is unique to each type of transistor. This alphanumeric code indicates the type of silicon used in the fabrication process, the power and frequency range of the device, and the technology and process used during manufacture.
The working principle of a BJT is based on the movement of minority carriers, which are electrons or holes, between base and collector regions of the transistor in response to the small base current. When the base current reduces, the number of holes or electrons moving between the base and collector decreases, which reduces the current flow from collector to emitter. When there is not enough base current, the collector-emitter current is also reduced, and the transistor is in cutoff mode. This principle is used for BJT as well as a variety of other semiconductor devices.
The application field and working principle of 2N6517CBU includes small signal amplification, RF power amplifiers, switching applications, and power management. It can be used in low voltage DC circuits like battery-powered electronics, mobile phones, portable audio players, and handheld radio transceivers. It is used in low voltage switch mode power regulators and other converters, such as DC-DC converters, voltage multipliers, current sources, and sensor circuitry. As the transconductance of the device is adjustable, transistors can also be used in low frequency voltage controlled oscillators. Moreover, it is used in switching circuits such as relay drivers and motor control.
2N6517CBU is a versatile three-terminal device that can be used for a wide range of electronic applications. Its combination of high gain and high power/frequency response makes it an ideal choice for many circuit designs. Whether it is used for signal amplification, power management, or switching applications, the 2N6517CBU can provide excellent performance and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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