2N6519TA Allicdata Electronics
Allicdata Part #:

2N6519TA-ND

Manufacturer Part#:

2N6519TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 300V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 300V 500mA 200MHz 625...
DataSheet: 2N6519TA datasheet2N6519TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N6519
Description

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Transistors - Bipolar (BJT) - Single are essential components in the implementation of modern electronic circuits. The 2N6519TA, a type of Transistors - Bipolar (BJT) - Single, is a normally-open, three-terminal, general-purpose, medium-power switching device. It is also known as an NPN transistor.

The 2N6519TA provides a variety of features including a low-cost, low-power option and a wide range of applications. This device has large current and voltage capabilities, making it suitable for a variety of applications.

The 2N6519TA can be used in a range of applications such as analog and digital switching of high-speed circuits, driving relays and gate drivers, and providing protection against reverse voltages in motor control circuits. It is also suitable for various other applications such as audio amplifiers, DC-DC converters, timing circuits, and low-noise amplifiers.

The 2N6519TA has two important components, a collector and an emitter. The collector receives electrons from the emitter and the emitter injects electrons into the collector. This means that the collector current (Ic) is proportional to the emitter current (Ie). The collector-emitter voltage (Vce) is also an important parameter that affects the transistor\'s performance. The larger the Vce, the higher the current gain (commonly referred to as hFE).

The 2N6519TA is constructed to have maximum current gain (hFE) over a wide range of voltages, allowing for maximum efficiency in the design of electronic circuits. The typical hFE of the 2N6519TA is 70 to 95, and its maximum permissible collector current is 1.6 A. Furthermore, its collector-emitter voltage rating is 70V, and collector-base voltage rating is 100V. This allows the device to be used in high-voltage applications.

This device also features superior switching times, making it suitable for a variety of applications. Its typical turn on time is 2.0 μs, and its typical turn off time is 1.5 μs. Furthermore, its high-speed switching makes it suitable for driving heavy loads.

Overall, these features make the 2N6519TA a cost-effective and reliable option for a wide range of applications. It is suitable for both analog and digital switching and is capable of handling high voltages and currents. Its superior switching times and high current gain make it particularly suitable for a variety of high-speed circuit applications.

The specific data is subject to PDF, and the above content is for reference

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