Allicdata Part #: | 2N6517RLRA-ND |
Manufacturer Part#: |
2N6517RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 350V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625... |
DataSheet: | 2N6517RLRA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 50mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N6517 |
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The 2N6517RLRA is a NPN silicon transistor that is specifically designed for high current, medium voltage and medium power applications. The device is one of many transistors manufactured by different manufacturers belonging to the category of bipolar junction transistors or BJT. Specifically, it is a single transistor, with 2N6517RLRA being the reference name and variant. It has a continuous collector current of 2A and a maximum operating temperature of 175°C.
It has a wide variety of applications including, but not limited to, switching, amplifying or amplifying-switching devices like audio amplifiers, audio preamplifiers, logic circuits, servo motor controls and industrial control systems. It can also be used as a motor speed controller, line receiver and other various power applications.
The 2N6517RLRA works on the principle of quantum mechanical tunneling of electrons. This occurs when the electric field in the junction region of the transistor is strong enough to create a quantum mechanical wavefunction and allow for the tunneling of electrons from one layer of semiconductor material to another. This mechanism transports electrons from the emitter to the collector providing for the establishment of a current flow.
The 2N6517RLRA is designed with three electrodes, the base, collector, and emitter. When an external voltage is applied, the electric field in the transistor covers the distance between the base and the emitter. The intensity of the electric field is decided based on the ratio of the external voltage over the electric resistance of the transistor junction region. This electric resistor is denoted by the material parameter HFE, or rE. This electric field sets up a quantum mechanical wavefunction and allows tunneling of electrons between layers of semiconductor.
The current flow established by the tunneling electrons is further controlled by the external voltage, causing the transistor to switch the output voltage according to the input voltage. This has made it an ideal switching element for various power, amplification and switching applications. It is also particularly suited for audio applications as it has a low noise level, low distortion, and offers an exceptionally high voltage swing than other similar components.
The 2N6517RLRA is particularly suited for high current and medium voltage applications, making it a viable option for commercial and industrial applications. In order to ensure consistent and reliable performance, it is important that the component is mounted properly. It is also important to take account of the biasing and collector-emitter junction temperatures in order to ensure that the component is not overloaded in any way.
The specific data is subject to PDF, and the above content is for reference
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