2SA933ASTPQ Allicdata Electronics
Allicdata Part #:

2SA933ASTPQTB-ND

Manufacturer Part#:

2SA933ASTPQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 50V 0.15A SPT
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 300m...
DataSheet: 2SA933ASTPQ datasheet2SA933ASTPQ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT
Base Part Number: 2SA933
Description

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The 2SA933ASTPQ is a single-transistor bipolar junction transistor, or BJT. A transistor is an electronic component that has three terminals and essentially acts as a switch or amplifier. It controls current and voltage by turning on and off in response to the current applied to its third terminal. The 2SA933ASTPQ is a particular type of BJT, the PNP type, which has the two main terminals of the Collector and the Emitter. The third terminal is the Base.

The 2SA933ASTPQ is a small signal transistor that is used in low power applications such as switching circuits and amplifiers. It is capable of handling currents up to a maximum of 500mA and can handle voltages of up to 100V. It is commonly used in audio amplifiers and oscillator circuits, as well as in general purpose amplification and switching applications.

In terms of its construction, the 2SA933ASTPQ is composed of a semiconductor material - typically silicon - with an impurity added to it. This impurity gives it its so-called "N" type or "P" type conductivity. In the case of the 2SA933ASTPQ, it has a P type impurity. As such, the transistor has two distinct regions - one being heavily doped and the other lightly doped. The heavily doped region is the Base, while the lightly doped region is the Collector and Emitter.

The transistor works by the principle of a minority charge carrier injection. That is, when a small current is applied to the Base, it creates a large enough voltage difference between the Base and Collector that a minority charge carrier - in this case holes - is injected into the Collector. This process results in an amplified current flowing through the transistor and thus amplifies the applied voltage.

The 2SA933ASTPQ is useful in a variety of applications, such as amplifying audio signals, switching circuits, oscillator circuits, and power supplies. Its low power design makes it ideal for use in low voltage systems, as well as for use as an amplifier for signals. In addition, its low power design makes it suitable for use in portable electronic devices such as mobile phones.

In conclusion, the 2SA933ASTPQ is a single-transistor bipolar junction transistor, or BJT, which is used in low power applications such as amplifying audio signals and switching circuits. It is composed of a semiconductor material with an impurity added to it and utilizes a minority charge carrier injection principle to produce an amplified voltage. Furthermore, its low power design makes it suitable for use in portable devices as well as general purpose amplification and switching applications.

The specific data is subject to PDF, and the above content is for reference

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