2SA949-Y,ONK-1F(J Allicdata Electronics
Allicdata Part #:

2SA949-YONK-1F(J-ND

Manufacturer Part#:

2SA949-Y,ONK-1F(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 150V 50mA 120MHz 800m...
DataSheet: 2SA949-Y,ONK-1F(J datasheet2SA949-Y,ONK-1F(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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In the field of electronics, transistors are used for a wide variety of applications. One such application is the single bipolar junction transistor (BJT), specifically 2SA949-Y/ONK-1F(J). This device consists of two doped semiconductor layers, having opposite polarity from each other, separated by a thin semiconductor layer known as the base. It is utilized in the amplification and switching of electrical signals, and can be used to create various electronic circuits. To understand the operation of this component better, it is helpful to have a good understanding of its underlying principles.

At the heart of single bipolar junction transistors are three terminals: the collector (C), the emitter (E), and the base (B). When power is applied, electrons can move from the emitter to the collector. This is achieved by having a positive charge on the base, which in turn attracts negative charges from the emitter. Since the emitter and collector have opposite polarities, this creates an electric field between them and allows electrons to flow from the emitter to the collector. This process is known as the PNP or NPN effect.

Once the transistor is activated, current can flow between its two terminals and can be adjusted by controlling the voltage applied to the base terminal. This is accomplished by changing the resistance of the base, which in turn changes the amount of current flowing through the transistor between the collector and emitter. When the base is set to a low resistance, the transistor is said to be “on” or in the “active” state, allowing current to flow freely between the collector and emitter. When the base is set to a high resistance, the transistor is in the “off” state, blocking the current between the collector and emitter.

Because of their relatively low cost and their high current gain and switching capability, single bipolar junction transistors are widely used in various electronic applications. For example, they are often used as digital logic switches in computer systems, as well as to amplify or switch AC and DC signals. They are also commonly used in amplifiers, as well as in power supplies, as they are capable of providing very high current gain. Additionally, their compact size and low power consumption make them ideal for applications such as portable music players and mobile phone handsets.

In conclusion, the 2SA949-Y/ONK-1F(J) single bipolar junction transistor is a highly versatile component which is utilized in many different applications. By understanding its underlying working principles and the three basic terminal connections of the collector, emitter, and base, the device can be used to create various types of electronic circuits that can provide amplification, switching and many other capabilities.

The specific data is subject to PDF, and the above content is for reference

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