2SA949-Y(T6ONK1,FM Allicdata Electronics
Allicdata Part #:

2SA949-Y(T6ONK1FM-ND

Manufacturer Part#:

2SA949-Y(T6ONK1,FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 150V 50mA 120MHz 800m...
DataSheet: 2SA949-Y(T6ONK1,FM datasheet2SA949-Y(T6ONK1,FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SA949-Y(T6ONK1,FM is a general purpose PNP transistor, which is often used in the electronics industry and it is classified as a single-bipolar transistor. It is manufactured to be used in the high speed switching applications, such as low power switching, inverter, voltage regulator and many others.

The structure of this type of transistor consists of three distinct layers of semiconductor material, which are connected to a lead frame. The two terminals of the transistor are used to connect it to an external circuit and drive it from an external power source. The PNP transistor has two diodes connected in series and one resistor connected in parallel.

The current-voltage characteristics of this transistor are determined by the structure of the device which includes the N-type base, the P-type emitter and the N-type collector. The current regulation of this type of transistor is done by the base-emitter junction\'s voltage drop and current gain is determined by the current between the collector and emitter.

The working principle of this transistor is based on a simple p-n-p structure. The base of the transistor consists of N-type semiconductor material which creates a p-n junction with the emitter. A positive voltage on the base will forward bias the emitter-base junction, allowing current to flow from the emitter to the base. This current through the base creates a larger current between the collector and emitter, thereby amplifying the signal.

This type of transistor is often used in the electronics industry in circuits that require switching or amplification of signals. It is used in many applications like digital electronics, analog switches, instrumentation, power supply circuits, data acquisition systems and many others. It can also be used in switching AC power and as a switch to activate a transistor-transistor logic (TTL) circuit.

The 2SA949-Y(T6ONK1,FM is a versatile transistor that can be used in various applications due to its low current consumption. It is an excellent choice for those who need to use a high speed switching device in their designs, as it offers superior performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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