2SA949-Y,F(J Allicdata Electronics
Allicdata Part #:

2SA949-YF(J-ND

Manufacturer Part#:

2SA949-Y,F(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 150V 50mA 120MHz 800m...
DataSheet: 2SA949-Y,F(J datasheet2SA949-Y,F(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SA949-Y,F(J is a kind of transistor belongs to Transistors - Bipolar (BJT) - Single. It mainly used as an amplifier element, switching element and a low-frequency oscillator. It is also be used in large current, small signal amplification and power switching, as well as in the implementation of voltage stabilization and protection.

The 2SA949-Y,F(J is a PNP transistor. It equivalent to the BC550C, and has a Continuous Collector Current of 0.15A and Maximum Collector Emitter Voltage of 30V. The maximum DC Collector Current of the transistor is 150mA and the maximum pulse current (ICM) is 500mA. It also has hFE range between 80 to 160. The maximum power dissipation allowed is 500mW and the maximum gain bandwidth product (fT) is 250MHz.

The working principle of the 2SA949-Y,F(J is explained by its terminals. The emitter of the transistor is the negative terminal and the collector is the positive terminal. The base is the middle terminal and it controls the flow of the current between collector and emitter. When a small current is applied to the base, the collector-to-emitter current is increased many times. This device can be used in circuits to amplify signals, control current and switch current on and off.

The 2SA949-Y,F(J is mainly used in circuits as an amplifier element. It has high gain and voltage amplification with low noise levels. It can also be used as a switching element for controlling current in the circuit and for creating a low-frequency oscillator. The transistor is ideal for low-power applications such as amplifying small signals and powering small motors.

The 2SA949-Y,F(J has a wide application range and its working principle makes it suitable for many applications. As an amplifier element, it is ideal for use in radio communication systems, audio amplifiers, signal processing amplifiers and instrumentation amplifiers. It also finds application in low-power circuits such as logic circuitry, low-power motors, and voltage-controlled switching. As a switching element, the 2SA949-Y,F(J is well-suited to switch loads with large currents, such as inductive loads, motors and light-emitting diodes. As a low-frequency oscillator, it can be used in low-power timers and alarms.

In conclusion, the 2SA949-Y,F(J is a PNP transistor that is used mainly as an amplifier element, as a switching element, and as a low-frequency oscillator. Its wide application range and its simple working principle make it suitable for many applications from radio communication systems to logic circuitry.

The specific data is subject to PDF, and the above content is for reference

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