
Allicdata Part #: | 2SA965-O(TE6FM)-ND |
Manufacturer Part#: |
2SA965-O(TE6,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | LSTM |
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The 2SA965-O(TE6,F,M) is a single-stage bipolar transistor, meaning that it contains both an emitter, collector and base leads contained under the same internal packaging that allows it to convert energy from one type to another. The 2SA965-O(TE6,F,M) specifically acts as a power transistor, which is designed specifically for power amplification applications developing high collector current and high voltage operation. As outlined in the parameter conditions, its maximum collector current is 500mA, and its maximum voltage capability is 25V, making it suitable for driving both high load currents and high load voltages.
The primary application of the 2SA965-O(TE6,F,M) is in amplifier circuits. This type of transistor has a low base-emitter junction voltage, which makes it more suitable for driving lower impedance loads, such as loudspeakers, while its high voltage/current capability makes it suitable for driving higher impedance loads, such as motors and LEDs. Furthermore, the 2SA965-O(TE6,F,M) has a low base-emitter reverse current, meaning that its overall performance does not degrade significantly when the base-emitter junction is reverse biased. This makes it especially suitable for driving complex circuits with multiple biasing circuits, such as audio preamplifiers.
The working principle of the 2SA965-O(TE6,F,M) transistor is based on the basic operation of a bipolar junction transistor. It has an emitter region, collector region and base region connected to each other through a p-n junction. When the base-emitter diode is forward biased, charge carriers that are generated in the emitter region are distributed between the collector region and base region. As a result, current is drawn from the collector region, allowing for the transistor to be used for power amplification operations.
In addition to the basic operating principles of a bipolar junction transistor, the 2SA965-O(TE6,F,M) transistor has a number of features that make it ideal for use in power amplification. Such features include high transition frequency and a high gain-bandwidth product, allowing for high current and voltage operation, along with a high cutoff frequency meaning that it can be used for switching applications.
The 2SA965-O(TE6,F,M) transistor is therefore an excellent choice for a variety of power amplifier applications, providing high collector current and high voltage operation, while also providing sufficient transition frequency, gain and frequency response characteristics to allow for successful operation at frequencies up to 300MHz. Its high voltage and current capabilities, combined with its low operating power and high frequency characteristics make it an ideal choice for power amplifier applications, with its usage ranging from audio preamplifiers and subwoofers to high-power switching circuits.
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Part Number | Manufacturer | Price | Quantity | Description |
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2SA965-O(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
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