2SA965-O,F(J Allicdata Electronics
Allicdata Part #:

2SA965-OF(J-ND

Manufacturer Part#:

2SA965-O,F(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 800MA 120V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900...
DataSheet: 2SA965-O,F(J datasheet2SA965-O,F(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM
Description

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2SA965-O,F(J is a commonly used transistor in both consumer and industrial electronics. It is a type of bipolar junction transistor (BJT) with a single collector and emitter. The 2SA965-O,F(J is used in a number of applications, ranging from high-frequency audio amplifiers to power switching and inverting circuits. It is a versatile device, with a wide range of operation voltage, current gain, wattage capacity and maximum operating temperature.

One of the main applications of 2SA965-O,F(J transistor is in power switching and inverting circuits. It can control high currents in an efficient way, due to its low on-state voltage drop and low power consumption. In such circuits, it can be used as an electronic switch for controlling appliances such as washing machines, refrigerators and air conditioners. It can also be used in robotics applications, as well as in medical devices, automotive and home appliances.

The 2SA965-O,F(J transistor can also be used in audio amplifiers, particularly in high-fidelity applications. Its hFE rating is generally high, allowing it to produce higher power output without generating a significant amount of distortion. It can also work well with high-frequency signals, due to its wide frequency range. Moreover, the device can reduce noise, making it an ideal choice for amplifying high-quality audio signals.

The 2SA965-O,F(J transistor operates under the principle of bipolar junction transport (BJT). It consists of two p-n junctions, one formed by a base layer to the collector and the other formed between the emitter and collector. The base layer is used to control the flow of electrons between the collector and emitter. The collector and emitter act as input and output for the device, respectively. When a current is applied to the base layer, it controls the flow of electrons. This creates a current gain, known as hFE, which is a measure of the transistor\'s current gain.

The 2SA965-O,F(J transistor has a wide range of application fields and working principle. It has a wide voltage range, allowing it to be used in a variety of circuits. It is also widely used as an audio amplifier, as well as in a range of power switching and inverting circuits. Its low power consumption, high current gain and wide frequency range make it an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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