2SA965-Y(T6CANO,FM

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2SA965-Y is a type of bipolar junction transistor (BJT), which is also referred to as a single transistor. This type of transistor is used in a variety of electronic applications, including amplifiers, power conversion, and switching circuits. This article will provide an overview of 2SA965-Y, including its field of application, working principle, and other technical details.

Field of Application

2SA965-Y is a general-purpose transistor, meaning that it can be used in a variety of low-power, low-frequency applications. This type of transistor is typically used in amplifying and switching applications, such as audio amplifiers, RF amplifiers, power converters, digital circuits, and motor controls. This transistor is also widely used in automotive applications, including electronic control units and engine management systems. 2SA965-Y also has low-noise and low-distortion characteristics, making it well-suited for audio circuits.

Working Principle

Bipolar junction transistors (BJTs) are three-terminal devices that consist of two p-n junctions formed from semiconductor materials. The base electrode (B) of the transistor is used to control the flow of current between the other two electrodes: the collector (C) and the emitter (E). When a small current is applied to the base terminal, this causes a larger current to flow between the emitter and collector terminals. This current amplification is called "beta" or "current gain," and it is this basic principle that underpins the operation of BJTs.

2SA965-Y transistors are formed on a single NPN silicon substrate. They have a rated maximum collector current of 500mA, with a maximum power dissipation of 500mW. The maximum collector-base and emitter-base voltages, VCB and VEB, are 20V and 5V, respectively, while the maximum collector-emitter voltage is -40V. The frequency range of the transistor is from 1MHz to 300MHz, and the hFE gain range is up to 110.

Physical Characteristics

2SA965-Y transistors have an approximate length and width of 5mm and 2.2mm, respectively. The maximum junction temperature for these transistors is 150°C, with a gate threshold voltage of 0.73V and a collector-to-emitter capacitance of 10pF. They also have an approximate collector saturation voltage of 380mV and a collector leakage current of 0.22mA. Additionally, these transistors have a storage temperature range of -55°C to 150°C, with a lead bend radius of 1.6mm.

Conclusion

2SA965-Y is a type of single bipolar junction transistor that is widely used in low-frequency, low-power electronic applications, including amplifiers and power converters. This transistor has a maximum collector current of 500mA, maximum power dissipation of 500mW, and a frequency range of 1MHz to 300MHz. It also has a number of physical characteristics, including a maximum junction temperature of 150°C and a lead bend radius of 1.6mm, as well as collector saturationvoltage and leakage current of 380mV and 0.22mA, respectively.

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