
Allicdata Part #: | 2SA965-YT6KOJPF(J-ND |
Manufacturer Part#: |
2SA965-Y,T6KOJPF(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | LSTM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SA965-Y,T6KOJPFJ transistor is a bipolar junction transistor, commonly referred to as a BJT. It is classified as an NPN type and is a single transistor. This device is primarily used for switching, amplifier, current stabilization and other applications that need an active device.
The 2SA965-Y,T6KOJPFJ is a three-terminal device, which means that, compared to single transistors, the BJT transistor has four terminals – three collectors and an emitter, as well as one base terminal. The base is positioned between both the collector and the emitter, and is used to control current flow. When the base terminal is connected to a voltage source, a current flows across the collector and emitter terminals. Depending on how it is wired, the device can act like a switch, amplifier, or current stabilizer.
Because it is a bipolar-type device, the current flow through the transistor is actually a combination of two components: a charge-type component and a drift-type component. In the context of an bipolar junction transistor, the charge component represents the amount of charge on the base terminal that is necessary to support the current through the device. The drift component results from the interaction of the two semiconductor materials used in the BJT transistor, which moves charge carriers across the base region.
The current-voltage characteristic of the 2SA965-Y,T6KOJPFJ is determined mainly by the base-to-emitter voltage, VBE, and the current gain, hFE. VBE is a measure of the voltage across the device when no current is flowing and hFE is a measure of how much current is required to flow through the base terminal before the transistor can turn on and current flow through the device.
The 2SA965-Y,T6KOJPFJ is typically used in a wide range of applications. It can be used as a switch in a variety of control circuits, such as for level control, temperature control, relay control, voltage regulation, threshold control and other applications. In addition, the device can act as an amplifier, where it can be used in a wide range of audio, RF and other applications, as well as a current stabilizer, which is used for stabilizing voltage or power regulator circuits.
The 2SA965-Y,T6KOJPFJ is designed to be voltage and current-controlled, which makes it suitable for a range of applications, including digital and analog electronic devices, medical devices, microelectronic devices, and consumer electronics.
In summary, the 2SA965-Y,T6KOJPFJ is a bipolar junction transistor that belongs to the single transistor group of transistors, and is primarily used for switching, amplifier, current stabilization, and other applications that need an active device. It is designed to be voltage and current-controlled, making it suitable for use in a range of electronic and medical devices, as well as consumer electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
2SA965-Y,SWFF(M | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA933ASTPR | ROHM Semicon... | -- | 1000 | TRANS PNP 50V 0.15A SPTBi... |
2SA949-O(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA965-Y(F,M) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA949-Y(T6JVC1,FM | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA933ASTPQ | ROHM Semicon... | 0.0 $ | 1000 | TRANS PNP 50V 0.15A SPTBi... |
2SA965-Y,T6F(J | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA949-Y,ONK-1F(M | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA965-Y,T6KOJPF(J | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA949-Y(JVC1,F,M) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA965-Y,F(J | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA933ASTPS | ROHM Semicon... | -- | 1000 | TRANS PNP 50V 0.15A SPTBi... |
2SA949-Y(T6SHRP,FM | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA949-Y,F(J | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA949-Y(T6ONK1,FM | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA965-O,F(J | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA949-Y,ONK-1F(J | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA965-Y(T6CANO,FM | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
2SA949-Y(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 50MA 150V TO226... |
2SA965-O(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PNP 800MA 120V TO22... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TRANS PNP 140V 1ABipolar (BJT) Transisto...

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...
