2SA949-Y(T6SHRP,FM Allicdata Electronics
Allicdata Part #:

2SA949-Y(T6SHRPFM-ND

Manufacturer Part#:

2SA949-Y(T6SHRP,FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 150V 50mA 120MHz 800m...
DataSheet: 2SA949-Y(T6SHRP,FM datasheet2SA949-Y(T6SHRP,FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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A 2SA949-Y (T6SHRP, FM) is a single bipolar junction transistor (BJT) used for a variety of consumer and industrial applications. It is a type of NPN general-purpose transistor, and its electrical characteristics are suitable for use in amplifiers, drivers, and other circuits. This transistor is typically offered in an epitaxial planar construction with a collector current rating of 500mA and a maximum collector to emitter voltage rating of 40V.

A BJT is essentially three layers of semiconductor material: the emitter, the collector, and the base. The base layer of a 2SA949-Y (T6SHRP, FM) consists of three sections, comprising a highly doped P+ section connected to the emitter or the collector of the transistor, a P-region, and a highly doped N+ region which functions as the actual base terminal of the transistor. The base of a 2SA949-Y (T6SHRP, FM) allows current to flow from the collector to the emitter when the device is in the "on" state.

2SA949-Y (T6SHRP, FM) transistors feature an integrated resistor between collector and base. When the device is in the "on" state, the voltage across the collector and base is limited to a maximum of 40V by the resistor, meaning that the device is suitable for use in circuits which require very high voltages. The resistivity of the resistor is also included in the design of the transistor in order to ensure that it maintains the correct operating temperature range.

The 2SA949-Y (T6SHRP, FM) is a popular choice for many applications due to its excellent power dissipation characteristics. It is capable of dissipating up to 1.4W at a maximum case temperature of 125°C, making it suitable for use in high power circuits such as amplifiers, drivers and power control. The device can also operate in junction temperatures up to a maximum of 175°C.

Applications for the 2SA949-Y (T6SHRP, FM) include linear and switch-mode power supplies, voltage regulators, motor drivers, digital logic circuits and amplifiers. It is also commonly used in audio applications such as preamplifiers and loudspeakers. The device is also well suited for use in digital circuits due to its fast switching speeds.

In conclusion, the 2SA949-Y (T6SHRP, FM) is a popular single BJT transistor suitable for a wide range of applications. This device has excellent power dissipation characteristics and can operate at high junction temperatures, making it suitable for use in high power circuits. Additionally, this transistor features an integrated resistor for voltage limiting, making it suitable for use in circuits requiring very high voltages. The 2SA949-Y (T6SHRP, FM) is thus a widely used device in a variety of consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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