Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 25mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	270 @ 100mA, 2V
Power - Max:	500mW
Frequency - Transition:	320MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	MPT3

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Introduction

The 2SAR293PFRAT100 is a high-quality bipolar junction transistor (BJT) device featuring exceptionally high frequency operation, high power performance, and low operating voltage. This device is designed to maximize the efficiency of a variety of industrial, medical, and consumer applications. This article will discuss the application field and working principle of the 2SAR293PFRAT100.

Application Field

The 2SAR293PFRAT100 can be used in a wide range of industrial, medical, and consumer applications. The device is specifically designed to optimize power performance and efficiency in high-frequency applications. Its exceptionally high frequency and low operating voltage make it an ideal choice for radios, televisions, solar energy systems, test and measurement equipment, motor drive systems, automotive systems, power supplies, audio amplifiers, medical equipment, and various other industrial, medical, and consumer applications.

Worki ng Principle

The 2SAR293PFRAT100 operates on the principle of bipolar transistor action, which involves the injection of majority carriers from the base region into the collector region. This injection results in a current flow through the device, allowing for low-resistance switching and the amplification of high-frequency signals. The device is highly reliable, with an expected life expectancy of 10,000+ hours.

Conclusion

In conclusion, the 2SAR293PFRAT100 is a high-quality bipolar junction transistor (BJT) device featuring exceptionally high frequency operation, high power performance, and low operating voltage. This device is specifically designed to optimize power performance and efficiency in high-frequency applications, making it ideal for a variety of industrial, medical, and consumer applications. The device operates on the principle of bipolar transistor action, with an expected life expectancy of 10,000+ hours.

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